CSD15380F3T
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Texas Instruments CSD15380F3T

Manufacturer No:
CSD15380F3T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 500MA 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD15380F3T is a 20-V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is part of the FemtoFET™ family, designed to minimize footprint and optimize performance in handheld and mobile applications. With its ultra-low capacitance and ultra-small footprint, it improves switching speeds and reduces noise coupling in data line applications. The CSD15380F3T is packaged in a PicoStar (YJM) package, which is a 0.6 mm x 0.7 mm Land Grid Array (LGA) with a maximum height of 0.36 mm, making it ideal for space-constrained designs.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 20 V
Gate-to-Source Voltage (VGS) 10 V
Continuous Drain Current (ID) 0.9 A
Pulsed Drain Current (IDM) 1.6 A
Power Dissipation (PD) 1.4 W
Drain-to-Source On-Resistance (RDS(on)) at VGS = 8 V 990 mΩ
Gate Charge Total (Qg) at VGS = 4.5 V 0.216 nC
Gate Charge Gate-to-Drain (Qgd) 0.027 nC
Threshold Voltage (VGS(th)) 1.1 V
Operating Temperature Range -55 to 150 °C
ESD Protection (HBM/CDM) > 4 kV / > 2 kV

Key Features

  • Ultra-low CiSS and COSS capacitance
  • Ultra-low Qg and Qgd gate charge
  • Ultra-small footprint: 0.73 mm x 0.64 mm
  • Ultra-low profile: 0.36-mm maximum height
  • Integrated ESD protection diode rated > 4-kV HBM and > 2-kV CDM
  • Lead and halogen free, RoHS compliant

Applications

  • Optimized for load switch applications
  • General purpose switching applications
  • Battery applications
  • Handheld and mobile applications
  • Data line applications to minimize noise coupling

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD15380F3T?

    The maximum drain-to-source voltage (VDS) is 20 V.

  2. What is the typical on-resistance (RDS(on)) of the CSD15380F3T at VGS = 8 V?

    The typical on-resistance (RDS(on)) at VGS = 8 V is 990 mΩ.

  3. What are the dimensions of the CSD15380F3T package?

    The package dimensions are 0.73 mm x 0.64 mm with a maximum height of 0.36 mm.

  4. Does the CSD15380F3T have integrated ESD protection? 4-kV HBM and > 2-kV CDM.

  5. What is the operating temperature range of the CSD15380F3T?

    The operating temperature range is -55 to 150 °C.

  6. Is the CSD15380F3T RoHS compliant?
  7. What are some common applications for the CSD15380F3T?

    Common applications include load switch, general purpose switching, battery, and handheld/mobile applications.

  8. What is the typical gate charge total (Qg) at VGS = 4.5 V?

    The typical gate charge total (Qg) at VGS = 4.5 V is 0.216 nC.

  9. What is the threshold voltage (VGS(th)) of the CSD15380F3T?

    The threshold voltage (VGS(th)) is 1.1 V.

  10. How many pins does the CSD15380F3T package have?

    The package has 3 pins.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:1190mOhm @ 100mA, 8V
Vgs(th) (Max) @ Id:1.35V @ 2.5µA
Gate Charge (Qg) (Max) @ Vgs:0.281 nC @ 10 V
Vgs (Max):10V
Input Capacitance (Ciss) (Max) @ Vds:10.5 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD15380F3T CSD13380F3T CSD15380F3
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 3.6A (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 1.8V, 4.5V 2.8V, 8V
Rds On (Max) @ Id, Vgs 1190mOhm @ 100mA, 8V 76mOhm @ 400mA, 4.5V 1190mOhm @ 100mA, 8V
Vgs(th) (Max) @ Id 1.35V @ 2.5µA 1.3V @ 250µA 1.35V @ 2.5µA
Gate Charge (Qg) (Max) @ Vgs 0.281 nC @ 10 V 1.2 nC @ 4.5 V 0.281 nC @ 10 V
Vgs (Max) 10V 8V 10V
Input Capacitance (Ciss) (Max) @ Vds 10.5 pF @ 10 V 156 pF @ 6 V 10.5 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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