STW69N65M5-4
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STMicroelectronics STW69N65M5-4

Manufacturer No:
STW69N65M5-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 58A TO247-4L
Delivery:
Payment:
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Product Introduction

Overview

The STW69N65M5-4 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology, which enhances its performance and efficiency. The STW69N65M5-4 is designed to offer high power handling capabilities, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.037 Ω (typ.)
ID (Drain Current) 58 A
Package TO247-4
Gate Threshold Voltage (VGS(th)) 3 V to 4 V
Operating Junction Temperature (TJ) -40°C to 150°C

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 0.037 Ω, which minimizes power losses.
  • High drain current (ID) of 58 A, enabling the handling of high current loads.
  • Easy to drive due to its low gate threshold voltage.
  • Robust and reliable performance over a wide operating temperature range (-40°C to 150°C).

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • High-power switching applications.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the drain-source voltage rating of the STW69N65M5-4?

    The drain-source voltage rating is 650 V.

  2. What is the typical on-resistance of the STW69N65M5-4?

    The typical on-resistance is 0.037 Ω.

  3. What is the maximum drain current of the STW69N65M5-4?

    The maximum drain current is 58 A.

  4. In what package is the STW69N65M5-4 available?

    The STW69N65M5-4 is available in a TO247-4 package.

  5. What is the operating junction temperature range of the STW69N65M5-4?

    The operating junction temperature range is -40°C to 150°C.

  6. What are some common applications for the STW69N65M5-4?

    Common applications include power supplies, DC-DC converters, motor control, and high-power switching applications.

  7. Why is the STW69N65M5-4 considered easy to drive?

    The STW69N65M5-4 is considered easy to drive due to its low gate threshold voltage.

  8. What is the significance of the MDmesh™ V technology in the STW69N65M5-4?

    The MDmesh™ V technology is an innovative proprietary vertical process technology that enhances the performance and efficiency of the MOSFET.

  9. Is the STW69N65M5-4 suitable for automotive applications?

    Yes, the STW69N65M5-4 can be used in automotive systems due to its high reliability and efficiency.

  10. Where can I find detailed specifications and datasheets for the STW69N65M5-4?

    Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:6420 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4
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