Overview
The STW57N65M5-4 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The result is a MOSFET with extremely low on-resistance, making it highly suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type of Transistor | N-channel MOSFET | |
| Maximum Drain-Source Voltage (VDS) | 650 | V |
| Maximum Gate-Source Voltage (VGS) | ±25 | V |
| Maximum Drain Current (ID) at TC = 25 °C | 42 | A |
| Maximum Drain Current (ID) at TC = 100 °C | 26.5 | A |
| Maximum Power Dissipation (PTOT) at TC = 25 °C | 250 | W |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Static Drain-Source On-State Resistance (RDS(on)) | 0.063 | Ω |
| Package | TO247-4 |
Key Features
- Higher VDS rating and higher dv/dt capability
- Excellent switching performance thanks to the extra driving source pin
- Easy to drive
- 100% avalanche tested
- Extremely low on-resistance, unmatched among silicon-based Power MOSFETs
Applications
- High efficiency switching applications
- Servers
- PV inverters
- Telecom infrastructure
- Multi kW battery chargers
Q & A
- What is the maximum drain-source voltage of the STW57N65M5-4 MOSFET?
The maximum drain-source voltage (VDS) is 650 V.
- What is the maximum gate-source voltage of the STW57N65M5-4 MOSFET?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the maximum drain current of the STW57N65M5-4 MOSFET at TC = 25 °C?
The maximum drain current (ID) at TC = 25 °C is 42 A.
- What is the maximum power dissipation of the STW57N65M5-4 MOSFET at TC = 25 °C?
The maximum power dissipation (PTOT) at TC = 25 °C is 250 W.
- What is the maximum junction temperature of the STW57N65M5-4 MOSFET?
The maximum junction temperature (Tj) is 150 °C.
- What is the static drain-source on-state resistance of the STW57N65M5-4 MOSFET?
The static drain-source on-state resistance (RDS(on)) is 0.063 Ω.
- In what package is the STW57N65M5-4 MOSFET available?
The STW57N65M5-4 MOSFET is available in a TO247-4 package.
- What are some of the key applications for the STW57N65M5-4 MOSFET?
Key applications include high efficiency switching applications such as servers, PV inverters, telecom infrastructure, and multi kW battery chargers.
- What makes the STW57N65M5-4 MOSFET stand out in terms of performance?
The STW57N65M5-4 MOSFET stands out due to its extremely low on-resistance, higher VDS rating, higher dv/dt capability, and excellent switching performance.
- Is the STW57N65M5-4 MOSFET avalanche tested?
Yes, the STW57N65M5-4 MOSFET is 100% avalanche tested.
