Overview
The STW56N60M2-4 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in demanding applications. It features a strip layout and an improved vertical structure, which result in low on-resistance and optimized switching characteristics. The STW56N60M2-4 is packaged in a TO247-4 package, making it suitable for high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS at TJ max. | 650 | V |
| RDS(on) max. | 55 mΩ | mΩ |
| ID (continuous) at TC = 25 °C | 52 A | A |
| ID (continuous) at TC = 100 °C | 33 A | A |
| IDM (pulsed) | 208 A | A |
| PTOT (total power dissipation) at TC = 25 °C | 350 W | W |
| VGS (gate-source voltage) | ±25 V | V |
| Tstg (storage temperature range) | -55 to 150 °C | °C |
| TJ (operating junction temperature) | 150 °C | °C |
| RthJC (thermal resistance, junction-to-case) | 0.36 °C/W | °C/W |
| RthJA (thermal resistance, junction-to-ambient) | 50 °C/W | °C/W |
| IAR (avalanche current) | 7.5 A | A |
| EAS (single pulse avalanche energy) | 1100 mJ | mJ |
| Qg (total gate charge) | 91 nC | nC |
| td(on) (turn-on delay time) | 18 ns | ns |
| tr (rise time) | 26.5 ns | ns |
| td(off) (turn-off delay time) | 119 ns | ns |
| tf (fall time) | 14 ns | ns |
Key Features
- Extremely low gate charge, enhancing switching performance.
- Excellent output capacitance (Coss) profile, reducing switching losses.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Zener-protected, providing additional protection against voltage spikes.
- Extra driving source pin for improved switching performance.
- Low on-resistance (RDS(on)) of 55 mΩ, suitable for high-efficiency converters.
- High continuous drain current of 52 A at TC = 25 °C.
- High total power dissipation capability of 350 W at TC = 25 °C.
Applications
The STW56N60M2-4 is particularly suited for high-power switching applications, including:
- High-efficiency converters such as DC-DC converters and power supplies.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- Uninterruptible power supplies (UPS) and other high-reliability power systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW56N60M2-4?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STW56N60M2-4?
The typical on-resistance (RDS(on)) is 55 mΩ.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 52 A.
- What is the total gate charge (Qg) of the STW56N60M2-4?
The total gate charge (Qg) is 91 nC.
- What are the thermal resistance values for junction-to-case (RthJC) and junction-to-ambient (RthJA)?
The thermal resistance values are 0.36 °C/W for RthJC and 50 °C/W for RthJA.
- Is the STW56N60M2-4 100% avalanche tested?
Yes, the STW56N60M2-4 is 100% avalanche tested.
- What is the package type of the STW56N60M2-4?
The package type is TO247-4.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 18 ns, and the typical turn-off delay time (td(off)) is 119 ns.
- What are the rise and fall times of the STW56N60M2-4?
The rise time (tr) is 26.5 ns, and the fall time (tf) is 14 ns.
- Is the STW56N60M2-4 RoHS compliant?
Yes, the STW56N60M2-4 is RoHS compliant.
