STS9P3LLH6
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STMicroelectronics STS9P3LLH6

Manufacturer No:
STS9P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 9A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STS9P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. The STS9P3LLH6 is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) -30 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at Tpcb = 25°C -9 A
Continuous Drain Current (ID) at Tpcb = 100°C -5.9 A
Pulsed Drain Current (IDM) -36 A
Total Dissipation at Tpcb=25°C 3 W
Storage Temperature Range -55 to 150 °C
Operating Junction Temperature Range -55 to 150 °C
On-Resistance (RDS(on)) max 15
Thermal Resistance Junction-Case (Rthj-case) 2.5 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 42 °C/W

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STS9P3LLH6 is suitable for various switching applications, including but not limited to:

  • Power management in industrial and automotive systems
  • High-efficiency power supplies
  • Motor control and drive systems
  • DC-DC converters and power factor correction circuits

Q & A

  1. What is the maximum drain-source voltage of the STS9P3LLH6?

    The maximum drain-source voltage (VDS) is -30 V.

  2. What is the typical on-resistance (RDS(on)) of the STS9P3LLH6?

    The typical on-resistance (RDS(on)) is 12 mΩ.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at Tpcb = 25°C is -9 A.

  4. What is the thermal resistance junction-case (Rthj-case)?

    The thermal resistance junction-case (Rthj-case) is 2.5 °C/W.

  5. What are the key features of the STS9P3LLH6?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  6. In what package is the STS9P3LLH6 available?

    The STS9P3LLH6 is available in the PowerFLAT™ 3.3x3.3 package.

  7. What is the storage temperature range for the STS9P3LLH6?

    The storage temperature range is -55 to 150 °C.

  8. What are some typical applications for the STS9P3LLH6?

    Typical applications include power management in industrial and automotive systems, high-efficiency power supplies, motor control and drive systems, and DC-DC converters.

  9. Is the STS9P3LLH6 RoHS compliant?
  10. Where can I find more detailed specifications and datasheets for the STS9P3LLH6?

    You can find detailed specifications and datasheets on the official STMicroelectronics website or through authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2615 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS9P3LLH6 STS5P3LLH6 STS6P3LLH6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 5A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 4.5A, 10V 56mOhm @ 2.5A, 10V 30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 6 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2615 pF @ 25 V 639 pF @ 25 V 1450 pF @ 24 V
FET Feature - - -
Power Dissipation (Max) 2.7W (Ta) 2.7W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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