STS4DNFS30L
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STMicroelectronics STS4DNFS30L

Manufacturer No:
STS4DNFS30L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 4A 8SO
Delivery:
Payment:
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Product Introduction

Overview

The STS4DNFS30L is an N-channel Power MOSFET produced by STMicroelectronics. This device combines the latest low voltage STripFET™ technology in an N-channel version with a low drop Schottky diode, making it highly versatile for various applications. The STS4DNFS30L is packaged in an SO-8 format, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(on) (On-State Resistance)0.039 Ω
ID (Drain Current)4 A
PackageSO-8
ConfigurationN-channel with low drop Schottky diode

Key Features

  • Low on-state resistance (RDS(on)) of 0.039 Ω, reducing power losses.
  • High drain current (ID) of 4 A, suitable for high current applications.
  • Compact SO-8 package, ideal for space-constrained designs.
  • Integrated low drop Schottky diode, enhancing overall efficiency and reducing component count.

Applications

  • DC-DC converters: The STS4DNFS30L is often used in DC-DC converter circuits due to its low on-state resistance and high current handling capability.
  • Power management: Suitable for power management in various electronic devices where high efficiency and low power loss are critical.
  • Automotive and industrial systems: Can be used in automotive and industrial applications requiring reliable and efficient power switching.

Q & A

  1. What is the drain-source voltage rating of the STS4DNFS30L?
    The drain-source voltage rating is 30 V.
  2. What is the on-state resistance of the STS4DNFS30L?
    The on-state resistance is 0.039 Ω.
  3. What is the maximum drain current of the STS4DNFS30L?
    The maximum drain current is 4 A.
  4. In what package is the STS4DNFS30L available?
    The STS4DNFS30L is available in an SO-8 package.
  5. What is the configuration of the STS4DNFS30L?
    The STS4DNFS30L is an N-channel Power MOSFET with an integrated low drop Schottky diode.
  6. Is the STS4DNFS30L suitable for high current applications?
    Yes, it is suitable for high current applications due to its high drain current rating.
  7. Can the STS4DNFS30L be used in DC-DC converters?
    Yes, it is often used in DC-DC converter circuits.
  8. Is the STS4DNFS30L still in production?
    No, the STS4DNFS30L is no longer manufactured.
  9. What are some common applications of the STS4DNFS30L?
    Common applications include DC-DC converters, power management, and automotive and industrial systems.
  10. What are the benefits of the integrated low drop Schottky diode in the STS4DNFS30L?
    The integrated low drop Schottky diode enhances overall efficiency and reduces component count.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS4DNFS30L STS4DPFS30L STS4DNFS30
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 5A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 2A, 10V 55mOhm @ 2.5A, 10V 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V 16 nC @ 5 V 4.7 nC @ 5 V
Vgs (Max) ±16V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 1350 pF @ 25 V 330 pF @ 25 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Tc) 2.5W (Tc) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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