STS1HNK60
  • Share:

STMicroelectronics STS1HNK60

Manufacturer No:
STS1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH™ technology. This technology is an optimization of the well-established PowerMESH™, offering significant reductions in on-resistance and high dv/dt capability. These devices are designed for the most demanding applications, ensuring robust performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Drain-gate voltage (VDGR) 600 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 0.4 A
Drain current (continuous) at TC = 100 °C (ID) 0.25 A
Pulsed drain current (IDM) 1.6 A
Total dissipation at TC = 25 °C (PTOT) 3.3 W
Peak diode recovery voltage slope (dv/dt) 3 V/ns
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-ambient (Rthj-amb) 120 °C/W
On-resistance (RDS(on)) 7.3 Ω (typ.) Ω

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected N-channel Power MOSFET
  • SuperMESH™ technology for reduced on-resistance

Applications

  • Switching applications
  • Power supply circuits
  • Lighting applications
  • Industrial and Automotive applications
  • SMPS, data centers, and solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STN1HNK60?

    The drain-source voltage (VDS) rating is 600 V.

  2. What is the typical on-resistance of the STN1HNK60?

    The typical on-resistance (RDS(on)) is 7.3 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 0.4 A.

  4. What is the operating junction temperature range of the STN1HNK60?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  5. Is the STN1HNK60 100% avalanche tested?
  6. What package types are available for the STN1HNK60?

    The STN1HNK60 is available in SOT-223 and TO-92 packages.

  7. What is the thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package?

    The thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package is 120 °C/W.

  8. What are some common applications for the STN1HNK60?

    Common applications include switching applications, power supply circuits, lighting applications, and industrial and automotive applications.

  9. Is the STN1HNK60 RoHS compliant?
  10. Where can I find the datasheet and other resources for the STN1HNK60?

    You can find the datasheet and other resources on the STMicroelectronics official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
600

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC