STS1HNK60
  • Share:

STMicroelectronics STS1HNK60

Manufacturer No:
STS1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH™ technology. This technology is an optimization of the well-established PowerMESH™, offering significant reductions in on-resistance and high dv/dt capability. These devices are designed for the most demanding applications, ensuring robust performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Drain-gate voltage (VDGR) 600 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 0.4 A
Drain current (continuous) at TC = 100 °C (ID) 0.25 A
Pulsed drain current (IDM) 1.6 A
Total dissipation at TC = 25 °C (PTOT) 3.3 W
Peak diode recovery voltage slope (dv/dt) 3 V/ns
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-ambient (Rthj-amb) 120 °C/W
On-resistance (RDS(on)) 7.3 Ω (typ.) Ω

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected N-channel Power MOSFET
  • SuperMESH™ technology for reduced on-resistance

Applications

  • Switching applications
  • Power supply circuits
  • Lighting applications
  • Industrial and Automotive applications
  • SMPS, data centers, and solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STN1HNK60?

    The drain-source voltage (VDS) rating is 600 V.

  2. What is the typical on-resistance of the STN1HNK60?

    The typical on-resistance (RDS(on)) is 7.3 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 0.4 A.

  4. What is the operating junction temperature range of the STN1HNK60?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  5. Is the STN1HNK60 100% avalanche tested?
  6. What package types are available for the STN1HNK60?

    The STN1HNK60 is available in SOT-223 and TO-92 packages.

  7. What is the thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package?

    The thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package is 120 °C/W.

  8. What are some common applications for the STN1HNK60?

    Common applications include switching applications, power supply circuits, lighting applications, and industrial and automotive applications.

  9. Is the STN1HNK60 RoHS compliant?
  10. Where can I find the datasheet and other resources for the STN1HNK60?

    You can find the datasheet and other resources on the STMicroelectronics official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
600

Please send RFQ , we will respond immediately.

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA