STS1HNK60
  • Share:

STMicroelectronics STS1HNK60

Manufacturer No:
STS1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH™ technology. This technology is an optimization of the well-established PowerMESH™, offering significant reductions in on-resistance and high dv/dt capability. These devices are designed for the most demanding applications, ensuring robust performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Drain-gate voltage (VDGR) 600 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 0.4 A
Drain current (continuous) at TC = 100 °C (ID) 0.25 A
Pulsed drain current (IDM) 1.6 A
Total dissipation at TC = 25 °C (PTOT) 3.3 W
Peak diode recovery voltage slope (dv/dt) 3 V/ns
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-ambient (Rthj-amb) 120 °C/W
On-resistance (RDS(on)) 7.3 Ω (typ.) Ω

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected N-channel Power MOSFET
  • SuperMESH™ technology for reduced on-resistance

Applications

  • Switching applications
  • Power supply circuits
  • Lighting applications
  • Industrial and Automotive applications
  • SMPS, data centers, and solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STN1HNK60?

    The drain-source voltage (VDS) rating is 600 V.

  2. What is the typical on-resistance of the STN1HNK60?

    The typical on-resistance (RDS(on)) is 7.3 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 0.4 A.

  4. What is the operating junction temperature range of the STN1HNK60?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  5. Is the STN1HNK60 100% avalanche tested?
  6. What package types are available for the STN1HNK60?

    The STN1HNK60 is available in SOT-223 and TO-92 packages.

  7. What is the thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package?

    The thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package is 120 °C/W.

  8. What are some common applications for the STN1HNK60?

    Common applications include switching applications, power supply circuits, lighting applications, and industrial and automotive applications.

  9. Is the STN1HNK60 RoHS compliant?
  10. Where can I find the datasheet and other resources for the STN1HNK60?

    You can find the datasheet and other resources on the STMicroelectronics official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
600

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP