STS1HNK60
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STMicroelectronics STS1HNK60

Manufacturer No:
STS1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA 8SO
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH™ technology. This technology is an optimization of the well-established PowerMESH™, offering significant reductions in on-resistance and high dv/dt capability. These devices are designed for the most demanding applications, ensuring robust performance and reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Drain-gate voltage (VDGR) 600 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 0.4 A
Drain current (continuous) at TC = 100 °C (ID) 0.25 A
Pulsed drain current (IDM) 1.6 A
Total dissipation at TC = 25 °C (PTOT) 3.3 W
Peak diode recovery voltage slope (dv/dt) 3 V/ns
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-ambient (Rthj-amb) 120 °C/W
On-resistance (RDS(on)) 7.3 Ω (typ.) Ω

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected N-channel Power MOSFET
  • SuperMESH™ technology for reduced on-resistance

Applications

  • Switching applications
  • Power supply circuits
  • Lighting applications
  • Industrial and Automotive applications
  • SMPS, data centers, and solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STN1HNK60?

    The drain-source voltage (VDS) rating is 600 V.

  2. What is the typical on-resistance of the STN1HNK60?

    The typical on-resistance (RDS(on)) is 7.3 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 0.4 A.

  4. What is the operating junction temperature range of the STN1HNK60?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  5. Is the STN1HNK60 100% avalanche tested?
  6. What package types are available for the STN1HNK60?

    The STN1HNK60 is available in SOT-223 and TO-92 packages.

  7. What is the thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package?

    The thermal resistance junction-ambient (Rthj-amb) for the SOT-223 package is 120 °C/W.

  8. What are some common applications for the STN1HNK60?

    Common applications include switching applications, power supply circuits, lighting applications, and industrial and automotive applications.

  9. Is the STN1HNK60 RoHS compliant?
  10. Where can I find the datasheet and other resources for the STN1HNK60?

    You can find the datasheet and other resources on the STMicroelectronics official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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