STS11NF30L
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STMicroelectronics STS11NF30L

Manufacturer No:
STS11NF30L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A 8SO
Delivery:
Payment:
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Product Introduction

Overview

The STS11NF30L is a power MOSFET produced by STMicroelectronics, designed to offer high performance and efficiency in various power management applications. This N-channel MOSFET is part of the STripFET™ II family, known for its low gate charge and optimized on-resistance (Rds(on)) x gate charge (Qg) trade-off. Although the STS11NF30L is currently obsolete and no longer manufactured, it remains relevant for understanding the evolution of power MOSFET technology and for legacy system maintenance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)11 A
Rds(on) (On-Resistance)8.5 mΩ (typical at VGS = 10 V)
Qg (Total Gate Charge)43 nC (typical)
PD (Power Dissipation)Dependent on package and thermal conditions
PackageSO-8

Key Features

  • Low Gate Charge: Optimized Rds(on) x Qg trade-off for efficient switching.
  • High Current Capability: Continuous drain current of 11 A.
  • Low On-Resistance: Typical Rds(on) of 8.5 mΩ at VGS = 10 V.
  • Robust Protection: 100% avalanche tested and Zener-protected.
  • Compact Package: Available in the SO-8 package for space-efficient designs.

Applications

The STS11NF30L is suitable for a variety of power management and switching applications, including:

  • Flyback Converters: Ideal for high-efficiency power conversion in flyback topologies.
  • LED Lighting: Used in LED lighting systems due to its high current handling and low on-resistance.
  • Power Supplies: Suitable for use in DC-DC converters and other power supply circuits.
  • Automotive Systems: Can be used in automotive applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STS11NF30L?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance (Rds(on)) of the STS11NF30L?
    The typical on-resistance (Rds(on)) is 8.5 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) of the STS11NF30L?
    The continuous drain current (ID) is 11 A.
  4. Is the STS11NF30L still in production?
    No, the STS11NF30L is obsolete and no longer manufactured.
  5. What package is the STS11NF30L available in?
    The STS11NF30L is available in the SO-8 package.
  6. What are some common applications for the STS11NF30L?
    Common applications include flyback converters, LED lighting, power supplies, and automotive systems.
  7. What is the total gate charge (Qg) of the STS11NF30L?
    The total gate charge (Qg) is typically 43 nC.
  8. Does the STS11NF30L have any built-in protection features?
    Yes, it is 100% avalanche tested and Zener-protected.
  9. What are some potential substitutes for the STS11NF30L?
    One potential substitute is the FDS5672 from onsemi.
  10. Why is the STS11NF30L part of the STripFET™ II family important?
    The STripFET™ II family is known for its optimized Rds(on) x Qg trade-off, making it efficient for switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS11NF30L STS12NF30L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 5.5A, 10V 9mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V 50 nC @ 4.5 V
Vgs (Max) ±18V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 25 V 2400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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