STS10P3LLH6
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STMicroelectronics STS10P3LLH6

Manufacturer No:
STS10P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STS10P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET H6 technology. This device features a new trench gate structure, which enhances its performance and efficiency. The STS10P3LLH6 is designed to provide high power handling capabilities, making it suitable for a variety of applications that require reliable and efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-30 V
RDS(on) (On-Resistance)0.01 Ω (typical)
ID (Drain Current)-12.5 A
PackageSO-8
TechnologySTripFET H6

Key Features

  • High efficiency due to low on-resistance (RDS(on)) of 0.01 Ω (typical).
  • High current handling capability of -12.5 A.
  • Advanced STripFET H6 technology with a new trench gate structure, enhancing performance and reducing losses.
  • Compact SO-8 package, suitable for space-constrained applications.
  • High voltage rating of -30 V, making it versatile for various power management tasks.

Applications

  • Power management in automotive systems, including battery management and motor control.
  • Industrial power supplies and DC-DC converters.
  • Consumer electronics, such as power adapters and battery chargers.
  • Renewable energy systems, including solar and wind power inverters.
  • General-purpose power switching applications where high efficiency and reliability are required.

Q & A

  1. What is the typical on-resistance of the STS10P3LLH6 MOSFET?
    The typical on-resistance (RDS(on)) of the STS10P3LLH6 is 0.01 Ω.
  2. What is the maximum drain current of the STS10P3LLH6?
    The maximum drain current (ID) of the STS10P3LLH6 is -12.5 A.
  3. What package type is the STS10P3LLH6 available in?
    The STS10P3LLH6 is available in an SO-8 package.
  4. What technology is used in the STS10P3LLH6?
    The STS10P3LLH6 uses STMicroelectronics' advanced STripFET H6 technology.
  5. What is the maximum drain-source voltage rating of the STS10P3LLH6?
    The maximum drain-source voltage (VDS) rating of the STS10P3LLH6 is -30 V.
  6. Where can I find detailed specifications for the STS10P3LLH6?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key.
  7. What are some common applications for the STS10P3LLH6?
    The STS10P3LLH6 is commonly used in power management for automotive systems, industrial power supplies, consumer electronics, renewable energy systems, and general-purpose power switching applications.
  8. How does the STripFET H6 technology benefit the STS10P3LLH6?
    The STripFET H6 technology enhances the performance of the STS10P3LLH6 by reducing on-resistance and increasing efficiency, making it suitable for high-power applications.
  9. Is the STS10P3LLH6 suitable for high-temperature environments?
    The datasheet should be consulted for specific temperature ratings and operating conditions. Generally, STMicroelectronics' MOSFETs are designed to operate within a specified temperature range, but it is crucial to check the datasheet for exact details.
  10. Can I use the STS10P3LLH6 in a high-frequency switching application?
    Yes, the STS10P3LLH6 can be used in high-frequency switching applications due to its low on-resistance and advanced technology. However, the specific application requirements should be matched with the device's capabilities as outlined in the datasheet.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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