STP60NF06FP
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STMicroelectronics STP60NF06FP

Manufacturer No:
STP60NF06FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 30A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STP60NF06FP is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET II process. This MOSFET is optimized to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. It is also ideal for any application requiring low gate charge drive requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C30A
Continuous Drain Current (ID) at TC = 100°C21A
Pulsed Drain Current (IDM)120A
Static Drain-Source On Resistance (RDS(on))0.014 - 0.016Ω
Gate Threshold Voltage (VGS(th))2 - 4V
Total Gate Charge (Qg)49 - 66nC
Thermal Resistance Junction-Case (Rthj-case)5°C/W
Maximum Operating Junction Temperature (Tj)-55 to 175°C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low input capacitance and gate charge due to STripFET II process
  • Suitable for high-efficiency isolated DC-DC converters
  • Low gate charge drive requirements
  • High current handling capability up to 30A continuous and 120A pulsed
  • High voltage rating of 60V

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom applications
  • Computer applications
  • Any application requiring low gate charge drive

Q & A

  1. What is the maximum drain-source voltage of the STP60NF06FP?
    The maximum drain-source voltage (VDS) is 60V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C is 30A.
  3. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is 2 to 4V.
  4. What is the typical static drain-source on resistance?
    The typical static drain-source on resistance (RDS(on)) is 0.014 to 0.016Ω.
  5. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 175°C.
  6. What is the total gate charge range?
    The total gate charge (Qg) range is 49 to 66 nC.
  7. What are the key applications of the STP60NF06FP?
    The key applications include advanced high-efficiency isolated DC-DC converters, telecom, and computer applications.
  8. What is the thermal resistance junction-case?
    The thermal resistance junction-case (Rthj-case) is 5°C/W.
  9. Is the STP60NF06FP suitable for high dv/dt applications?
    Yes, it has exceptional dv/dt capability.
  10. What is the package type of the STP60NF06FP?
    The package type is TO-220FP.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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