STP5N105K5
  • Share:

STMicroelectronics STP5N105K5

Manufacturer No:
STP5N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 3A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP5N105K5 is an N-channel Power MOSFET designed by STMicroelectronics using their advanced MDmesh™ K5 technology. This device is characterized by its high voltage and low on-resistance, making it suitable for applications requiring high power density and efficiency. The STP5N105K5 is available in a TO-220 package and is known for its ruggedness and reliability in various power management scenarios.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1050 V
RDS(on) (Static Drain-Source On-Resistance) 2.9 Ω
ID (Drain Current, continuous at TC = 25°C) 3 A
ID (Drain Current, continuous at TC = 100°C) 1.89 A
PTOT (Total Dissipation at TC = 25°C) 85 W
VGS (Gate-Source Voltage) ±30 V
Tj (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C

Key Features

  • Industry’s lowest RDS(on) for high efficiency and power density
  • Ultra-low gate charge for fast switching applications
  • 100% avalanche tested for robustness and reliability
  • Zener-protected gate-source to enhance ESD capability and eliminate the need for external components
  • MDmesh™ K5 technology for superior performance and ruggedness

Applications

  • Switching applications such as power supplies, motor control, and DC-DC converters
  • High-power density and high-efficiency systems
  • Aerospace and industrial power management systems
  • Automotive and renewable energy systems

Q & A

  1. What is the maximum drain-source voltage of the STP5N105K5?

    The maximum drain-source voltage (VDS) is 1050 V.

  2. What is the typical on-resistance (RDS(on)) of the STP5N105K5?

    The typical on-resistance (RDS(on)) is 2.9 Ω.

  3. What is the continuous drain current at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 3 A.

  4. What is the total dissipation power at TC = 25°C?

    The total dissipation power (PTOT) at TC = 25°C is 85 W.

  5. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±30 V.

  6. What is the operating junction temperature range?

    The operating junction temperature (Tj) range is -55 to 150°C.

  7. What technology is used in the STP5N105K5?

    The STP5N105K5 uses STMicroelectronics' MDmesh™ K5 technology.

  8. Is the STP5N105K5 Zener-protected?
  9. What are the common applications of the STP5N105K5?
  10. In what package is the STP5N105K5 available?

    The STP5N105K5 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.91
211

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP5N105K5 STP7N105K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V 1050 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 100 V 380 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3