STP5N105K5
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STMicroelectronics STP5N105K5

Manufacturer No:
STP5N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 3A TO220
Delivery:
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Product Introduction

Overview

The STP5N105K5 is an N-channel Power MOSFET designed by STMicroelectronics using their advanced MDmesh™ K5 technology. This device is characterized by its high voltage and low on-resistance, making it suitable for applications requiring high power density and efficiency. The STP5N105K5 is available in a TO-220 package and is known for its ruggedness and reliability in various power management scenarios.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1050 V
RDS(on) (Static Drain-Source On-Resistance) 2.9 Ω
ID (Drain Current, continuous at TC = 25°C) 3 A
ID (Drain Current, continuous at TC = 100°C) 1.89 A
PTOT (Total Dissipation at TC = 25°C) 85 W
VGS (Gate-Source Voltage) ±30 V
Tj (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C

Key Features

  • Industry’s lowest RDS(on) for high efficiency and power density
  • Ultra-low gate charge for fast switching applications
  • 100% avalanche tested for robustness and reliability
  • Zener-protected gate-source to enhance ESD capability and eliminate the need for external components
  • MDmesh™ K5 technology for superior performance and ruggedness

Applications

  • Switching applications such as power supplies, motor control, and DC-DC converters
  • High-power density and high-efficiency systems
  • Aerospace and industrial power management systems
  • Automotive and renewable energy systems

Q & A

  1. What is the maximum drain-source voltage of the STP5N105K5?

    The maximum drain-source voltage (VDS) is 1050 V.

  2. What is the typical on-resistance (RDS(on)) of the STP5N105K5?

    The typical on-resistance (RDS(on)) is 2.9 Ω.

  3. What is the continuous drain current at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 3 A.

  4. What is the total dissipation power at TC = 25°C?

    The total dissipation power (PTOT) at TC = 25°C is 85 W.

  5. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±30 V.

  6. What is the operating junction temperature range?

    The operating junction temperature (Tj) range is -55 to 150°C.

  7. What technology is used in the STP5N105K5?

    The STP5N105K5 uses STMicroelectronics' MDmesh™ K5 technology.

  8. Is the STP5N105K5 Zener-protected?
  9. What are the common applications of the STP5N105K5?
  10. In what package is the STP5N105K5 available?

    The STP5N105K5 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP5N105K5 STP7N105K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V 1050 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 100 V 380 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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