STP240N10F7
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STMicroelectronics STP240N10F7

Manufacturer No:
STP240N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 180A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP240N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-state resistance and enhanced trench gate structure, making it suitable for high-power applications. The STP240N10F7 is particularly noted for its high current handling capability and low conduction losses, which are critical in modern power electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-State Resistance) 2.85
ID (Drain Current) 110 A
VGS(th) (Gate-Source Threshold Voltage) 2-4 V
PD (Power Dissipation) Varies with package and conditions W
Package TO-220 -

Key Features

  • Low On-State Resistance: The STP240N10F7 features a very low RDS(on) of 2.85 mΩ, reducing conduction losses and improving overall efficiency.
  • High Current Capability: With a drain current rating of 110 A, this MOSFET is suitable for high-power applications.
  • Advanced STripFET™ F7 Technology: This technology enhances the trench gate structure, leading to better performance and reliability.
  • TO-220 Package: The device is available in a TO-220 package, which is widely used in power electronics for its thermal and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters and power supplies due to its low on-state resistance and high current handling.
  • Motor Control: Used in motor drive applications where high efficiency and reliability are crucial.
  • Industrial Automation: Ideal for various industrial automation systems requiring high-power switching.
  • Automotive Systems: Can be used in automotive applications such as electric vehicles and hybrid vehicles due to its robust performance and reliability.

Q & A

  1. What is the drain-source voltage rating of the STP240N10F7?

    The drain-source voltage rating of the STP240N10F7 is 100 V.

  2. What is the typical on-state resistance of the STP240N10F7?

    The typical on-state resistance (RDS(on)) of the STP240N10F7 is 2.85 mΩ.

  3. What is the maximum drain current of the STP240N10F7?

    The maximum drain current (ID) of the STP240N10F7 is 110 A.

  4. What package is the STP240N10F7 available in?

    The STP240N10F7 is available in a TO-220 package.

  5. What technology does the STP240N10F7 use?

    The STP240N10F7 uses the advanced STripFET™ F7 technology.

  6. What are some common applications of the STP240N10F7?

    The STP240N10F7 is commonly used in power supplies, motor control, industrial automation, and automotive systems.

  7. What is the gate-source threshold voltage range of the STP240N10F7?

    The gate-source threshold voltage (VGS(th)) range of the STP240N10F7 is typically between 2 V and 4 V.

  8. How does the STripFET™ F7 technology benefit the performance of the STP240N10F7?

    The STripFET™ F7 technology enhances the trench gate structure, leading to lower on-state resistance and improved overall performance and reliability.

  9. Is the STP240N10F7 suitable for high-power DC-DC converters?
  10. Can the STP240N10F7 be used in automotive applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:176 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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