STP240N10F7
  • Share:

STMicroelectronics STP240N10F7

Manufacturer No:
STP240N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 180A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP240N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-state resistance and enhanced trench gate structure, making it suitable for high-power applications. The STP240N10F7 is particularly noted for its high current handling capability and low conduction losses, which are critical in modern power electronics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-State Resistance) 2.85
ID (Drain Current) 110 A
VGS(th) (Gate-Source Threshold Voltage) 2-4 V
PD (Power Dissipation) Varies with package and conditions W
Package TO-220 -

Key Features

  • Low On-State Resistance: The STP240N10F7 features a very low RDS(on) of 2.85 mΩ, reducing conduction losses and improving overall efficiency.
  • High Current Capability: With a drain current rating of 110 A, this MOSFET is suitable for high-power applications.
  • Advanced STripFET™ F7 Technology: This technology enhances the trench gate structure, leading to better performance and reliability.
  • TO-220 Package: The device is available in a TO-220 package, which is widely used in power electronics for its thermal and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters and power supplies due to its low on-state resistance and high current handling.
  • Motor Control: Used in motor drive applications where high efficiency and reliability are crucial.
  • Industrial Automation: Ideal for various industrial automation systems requiring high-power switching.
  • Automotive Systems: Can be used in automotive applications such as electric vehicles and hybrid vehicles due to its robust performance and reliability.

Q & A

  1. What is the drain-source voltage rating of the STP240N10F7?

    The drain-source voltage rating of the STP240N10F7 is 100 V.

  2. What is the typical on-state resistance of the STP240N10F7?

    The typical on-state resistance (RDS(on)) of the STP240N10F7 is 2.85 mΩ.

  3. What is the maximum drain current of the STP240N10F7?

    The maximum drain current (ID) of the STP240N10F7 is 110 A.

  4. What package is the STP240N10F7 available in?

    The STP240N10F7 is available in a TO-220 package.

  5. What technology does the STP240N10F7 use?

    The STP240N10F7 uses the advanced STripFET™ F7 technology.

  6. What are some common applications of the STP240N10F7?

    The STP240N10F7 is commonly used in power supplies, motor control, industrial automation, and automotive systems.

  7. What is the gate-source threshold voltage range of the STP240N10F7?

    The gate-source threshold voltage (VGS(th)) range of the STP240N10F7 is typically between 2 V and 4 V.

  8. How does the STripFET™ F7 technology benefit the performance of the STP240N10F7?

    The STripFET™ F7 technology enhances the trench gate structure, leading to lower on-state resistance and improved overall performance and reliability.

  9. Is the STP240N10F7 suitable for high-power DC-DC converters?
  10. Can the STP240N10F7 be used in automotive applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:176 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.34
156

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN