STP21NM50N
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STMicroelectronics STP21NM50N

Manufacturer No:
STP21NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 18A TO220AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STP21NM50N is a high-performance N-channel power MOSFET designed by STMicroelectronics. This component is characterized by its robust specifications, making it suitable for a variety of high-power applications. Although it is currently obsolete and no longer manufactured, it remains an important reference for similar components and applications.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 500 V
Vgs (Gate-Source Voltage) ±25 V
Id (Continuous Drain Current) 18 A
Pd (Power Dissipation) 140 W (Tc)
Tj (Junction Temperature) -55 to 150 °C
Ciss (Input Capacitance) 1950 pF @ 25 V

Key Features

  • High breakdown voltage of 500V, enabling the handling of significant voltage levels.
  • Continuous drain current of 18A, suitable for high-power applications.
  • Maximum power dissipation of 140W (Tc), indicating high thermal performance.
  • Zener-protected and 100% avalanche tested, ensuring reliability and robustness.
  • Available in TO-220, FP, D2PAK, and TO-247 packages, offering flexibility in design.

Applications

  • Flyback converters: The STP21NM50N is ideal for use in flyback converter circuits due to its high voltage and current handling capabilities.
  • LED lighting: Suitable for LED lighting applications that require high power and reliability.
  • Power supplies: Can be used in various power supply designs where high voltage and current are necessary.
  • Industrial and automotive systems: Its robust specifications make it a candidate for use in industrial and automotive applications where reliability is crucial.

Q & A

  1. What is the maximum drain-source voltage of the STP21NM50N?

    The maximum drain-source voltage (Vds) of the STP21NM50N is 500V.

  2. What is the continuous drain current of the STP21NM50N?

    The continuous drain current (Id) of the STP21NM50N is 18A).

  3. What are the available packages for the STP21NM50N?

    The STP21NM50N is available in TO-220, FP, D2PAK, and TO-247 packages).

  4. Is the STP21NM50N still in production?

    No, the STP21NM50N is obsolete and no longer manufactured).

  5. What are some common applications for the STP21NM50N?

    Common applications include flyback converters, LED lighting, power supplies, and industrial/automotive systems).

  6. What is the maximum gate-source voltage of the STP21NM50N?

    The maximum gate-source voltage (Vgs) of the STP21NM50N is ±25V).

  7. What is the maximum power dissipation of the STP21NM50N?

    The maximum power dissipation (Pd) of the STP21NM50N is 140W (Tc)).

  8. What is the input capacitance of the STP21NM50N?

    The input capacitance (Ciss) of the STP21NM50N is 1950 pF at 25 V).

  9. Is the STP21NM50N Zener-protected and avalanche tested?
  10. What are some recommended substitutes for the STP21NM50N?

    Recommended substitutes include the STP20NM50 from STMicroelectronics).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB21NM50N-1
STB21NM50N-1
MOSFET N-CH 500V 18A I2PAK
STB21NM50N
STB21NM50N
MOSFET N-CH 500V 18A D2PAK
STF21NM50N
STF21NM50N
MOSFET N-CH 500V 18A TO220FP
STW21NM50N
STW21NM50N
MOSFET N-CH 500V 18A TO247-3

Similar Products

Part Number STP21NM50N STP23NM50N STP28NM50N STP25NM50N STP21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tc) 21A (Tc) 22A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 158mOhm @ 10.5A, 10V 140mOhm @ 11A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 45 nC @ 10 V 50 nC @ 10 V 84 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V 1330 pF @ 50 V 1735 pF @ 25 V 2565 pF @ 25 V 1900 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 140W (Tc) 125W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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