STP21NM50N
  • Share:

STMicroelectronics STP21NM50N

Manufacturer No:
STP21NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP21NM50N is a high-performance N-channel power MOSFET designed by STMicroelectronics. This component is characterized by its robust specifications, making it suitable for a variety of high-power applications. Although it is currently obsolete and no longer manufactured, it remains an important reference for similar components and applications.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 500 V
Vgs (Gate-Source Voltage) ±25 V
Id (Continuous Drain Current) 18 A
Pd (Power Dissipation) 140 W (Tc)
Tj (Junction Temperature) -55 to 150 °C
Ciss (Input Capacitance) 1950 pF @ 25 V

Key Features

  • High breakdown voltage of 500V, enabling the handling of significant voltage levels.
  • Continuous drain current of 18A, suitable for high-power applications.
  • Maximum power dissipation of 140W (Tc), indicating high thermal performance.
  • Zener-protected and 100% avalanche tested, ensuring reliability and robustness.
  • Available in TO-220, FP, D2PAK, and TO-247 packages, offering flexibility in design.

Applications

  • Flyback converters: The STP21NM50N is ideal for use in flyback converter circuits due to its high voltage and current handling capabilities.
  • LED lighting: Suitable for LED lighting applications that require high power and reliability.
  • Power supplies: Can be used in various power supply designs where high voltage and current are necessary.
  • Industrial and automotive systems: Its robust specifications make it a candidate for use in industrial and automotive applications where reliability is crucial.

Q & A

  1. What is the maximum drain-source voltage of the STP21NM50N?

    The maximum drain-source voltage (Vds) of the STP21NM50N is 500V.

  2. What is the continuous drain current of the STP21NM50N?

    The continuous drain current (Id) of the STP21NM50N is 18A).

  3. What are the available packages for the STP21NM50N?

    The STP21NM50N is available in TO-220, FP, D2PAK, and TO-247 packages).

  4. Is the STP21NM50N still in production?

    No, the STP21NM50N is obsolete and no longer manufactured).

  5. What are some common applications for the STP21NM50N?

    Common applications include flyback converters, LED lighting, power supplies, and industrial/automotive systems).

  6. What is the maximum gate-source voltage of the STP21NM50N?

    The maximum gate-source voltage (Vgs) of the STP21NM50N is ±25V).

  7. What is the maximum power dissipation of the STP21NM50N?

    The maximum power dissipation (Pd) of the STP21NM50N is 140W (Tc)).

  8. What is the input capacitance of the STP21NM50N?

    The input capacitance (Ciss) of the STP21NM50N is 1950 pF at 25 V).

  9. Is the STP21NM50N Zener-protected and avalanche tested?
  10. What are some recommended substitutes for the STP21NM50N?

    Recommended substitutes include the STP20NM50 from STMicroelectronics).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
188

Please send RFQ , we will respond immediately.

Same Series
STB21NM50N-1
STB21NM50N-1
MOSFET N-CH 500V 18A I2PAK
STB21NM50N
STB21NM50N
MOSFET N-CH 500V 18A D2PAK
STF21NM50N
STF21NM50N
MOSFET N-CH 500V 18A TO220FP
STW21NM50N
STW21NM50N
MOSFET N-CH 500V 18A TO247-3

Similar Products

Part Number STP21NM50N STP23NM50N STP28NM50N STP25NM50N STP21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tc) 21A (Tc) 22A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 158mOhm @ 10.5A, 10V 140mOhm @ 11A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 45 nC @ 10 V 50 nC @ 10 V 84 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V 1330 pF @ 50 V 1735 pF @ 25 V 2565 pF @ 25 V 1900 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 140W (Tc) 125W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223