Overview
The STP20NK50Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed for high-power switching applications and is available in TO-220 and TO-220FP packages. It features a drain-source voltage (VDS) of 500 V, a drain current (ID) of 17 A, and a low on-resistance (RDS(on)) of 0.23 Ω. The integrated Zener diodes enhance the device's ESD capability and protect against voltage transients, making it a reliable choice for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) Continuous at TC = 25 °C | 17 | A |
| Drain Current (ID) Continuous at TC = 100 °C | 10.71 | A |
| Pulse Drain Current (IDM) | 68 | A |
| Total Dissipation at TC = 25 °C | 190 | W |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 8.5 A | 0.23 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.66 (TO-220FP), 3.1 (TO-220) | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure reliability under extreme conditions.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitance, reducing switching losses.
- Integrated Zener diodes for enhanced ESD protection and to safely absorb voltage transients.
- Low on-resistance (RDS(on)) of 0.23 Ω, reducing power losses.
- High drain current (ID) of 17 A, suitable for high-power applications.
Applications
The STP20NK50Z is designed for various high-power switching applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP20NK50Z?
The maximum drain-source voltage (VDS) is 500 V.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 17 A.
- What is the on-resistance (RDS(on)) of the STP20NK50Z?
The on-resistance (RDS(on)) is 0.23 Ω at VGS = 10 V and ID = 8.5 A.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±30 V.
- What is the maximum junction temperature (Tj)?
The maximum junction temperature (Tj) is 150 °C.
- What are the package options for the STP20NK50Z?
The STP20NK50Z is available in TO-220 and TO-220FP packages.
- Does the STP20NK50Z have built-in ESD protection?
- What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 0.66 °C/W.
- What is the total dissipation at 25 °C for the STP20NK50Z?
The total dissipation at 25 °C is 190 W.
- What are some typical applications for the STP20NK50Z?
Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.
