STP20N65M5
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STMicroelectronics STP20N65M5

Manufacturer No:
STP20N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 18A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP20N65M5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ V Power MOSFET family, which utilizes an innovative proprietary vertical process technology. It is designed to offer high efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-State Resistance)0.160 Ohm (typ.)
ID (Drain Current)18 A
PackageTO-220AB
PD (Power Dissipation)130 W
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • Utilizes ST's MDmesh™ V Power MOSFET technology with an enhanced trench gate structure.
  • 100% avalanche tested and Zener-protected.
  • High efficiency and low on-state resistance.
  • Ideal for high-power applications such as flyback converters and LED lighting.

Applications

  • Flyback converters.
  • LED lighting systems.
  • High-power switching applications.
  • Power supplies and DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage of the STP20N65M5? The maximum drain-source voltage is 650 V.
  2. What is the typical on-state resistance of the STP20N65M5? The typical on-state resistance is 0.160 Ohm.
  3. What is the maximum drain current of the STP20N65M5? The maximum drain current is 18 A.
  4. In what package is the STP20N65M5 available? The STP20N65M5 is available in the TO-220AB package.
  5. What are the typical applications of the STP20N65M5? Typical applications include flyback converters, LED lighting, and other high-power switching applications.
  6. Is the STP20N65M5 avalanche tested? Yes, the STP20N65M5 is 100% avalanche tested.
  7. What is the power dissipation capability of the STP20N65M5? The power dissipation capability is 130 W.
  8. What is the junction temperature range of the STP20N65M5? The junction temperature range is -55°C to 150°C.
  9. What technology does the STP20N65M5 use? The STP20N65M5 uses ST's MDmesh™ V Power MOSFET technology with an enhanced trench gate structure.
  10. Where can I find detailed specifications for the STP20N65M5? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1345 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STW20N65M5
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Similar Products

Part Number STP20N65M5 STP30N65M5 STP21N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 22A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V 139mOhm @ 11A, 10V 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 64 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1345 pF @ 100 V 2880 pF @ 100 V 1950 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 130W (Tc) 140W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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