Overview
The STP21N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is built using an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it highly suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDSS (Drain-Source Breakdown Voltage) | 650 | V |
| RDS(on) (On-Resistance) | 0.150 Ω (typ.), 0.179 Ω (max.) | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 17 A | A |
| ID (Drain Current, continuous at TC = 100 °C) | 10.7 A | A |
| IDM (Drain Current, pulsed) | 68 A | A |
| PTOT (Total Dissipation at TC = 25 °C) | 125 W | W |
| VGS (Gate-Source Voltage) | ± 25 V | V |
| Tj (Maximum Junction Temperature) | 150 °C | °C |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 62.5 °C/W | °C/W |
Key Features
- Worldwide best RDS(on) * area, ensuring low on-resistance and high efficiency.
- Higher VDSS rating of 650 V, providing robust voltage handling.
- High dv/dt capability, suitable for high-frequency switching applications.
- Excellent switching performance due to the MDmesh™ V technology.
- 100% avalanche tested, ensuring reliability under extreme conditions.
- Zener-protected, enhancing the device's robustness against voltage spikes.
Applications
The STP21N65M5 is ideal for various switching applications, including:
- Flyback converters
- LED lighting systems
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
Q & A
- What is the maximum drain-source breakdown voltage (VDSS) of the STP21N65M5?
The maximum drain-source breakdown voltage (VDSS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STP21N65M5?
The typical on-resistance (RDS(on)) is 0.150 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 17 A.
- What is the maximum pulsed drain current (IDM) of the STP21N65M5?
The maximum pulsed drain current (IDM) is 68 A.
- What are the typical applications for the STP21N65M5?
The STP21N65M5 is typically used in flyback converters, LED lighting systems, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
- What is the maximum junction temperature (Tj) for the STP21N65M5?
The maximum junction temperature (Tj) is 150 °C.
- Is the STP21N65M5 100% avalanche tested?
- What is the thermal resistance junction-ambient (Rthj-amb) of the STP21N65M5?
The thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
- What are the available packages for the STP21N65M5?
The STP21N65M5 is available in TO-220, I²PAK, D²PAK, TO-220FP, and TO-247 packages.
- Does the STP21N65M5 have Zener protection?
