STP180N10F3
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STMicroelectronics STP180N10F3

Manufacturer No:
STP180N10F3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 120A TO220
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Product Introduction

Overview

The STH180N10F3-2 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET F3 technology. This device is designed to offer superior switching performance by minimizing on-resistance and gate charge. It is packaged in the H2PAK-2 format, making it suitable for high-power applications that require efficient and reliable operation.

Key Specifications

Parameter Value Unit
Order Code STH180N10F3-2
VDS (Drain-source voltage) 100 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25°C) 180 A
ID (Continuous drain current at TC = 100°C) 120 A
IDM (Pulsed drain current) 720 A
RDS(on) (Static drain-source on-resistance) 3.9 mΩ (typ.), 4.5 mΩ (max.)
PTOT (Total power dissipation at TC = 25°C) 315 W W
TJ (Operating junction temperature) -55 to 175 °C

Key Features

  • Ultra-low on-resistance (RDS(on)) of 3.9 mΩ (typ.) and 4.5 mΩ (max.)
  • High continuous drain current of 180 A at TC = 25°C and 120 A at TC = 100°C
  • 100% avalanche tested
  • Low gate charge for superior switching performance
  • H2PAK-2 package for high-power applications
  • ECOPACK compliant for environmental sustainability

Applications

  • Switching applications requiring high efficiency and reliability
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and automotive power systems

Q & A

  1. What is the typical on-resistance of the STH180N10F3-2 MOSFET?

    The typical on-resistance (RDS(on)) is 3.9 mΩ.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 180 A.

  3. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is -55 to 175°C.

  4. What package type is used for the STH180N10F3-2?

    The device is packaged in the H2PAK-2 format.

  5. Is the STH180N10F3-2 environmentally compliant?
  6. What are the typical applications for this MOSFET?

    It is typically used in switching applications, power supplies, DC-DC converters, motor control, and industrial and automotive power systems.

  7. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 720 A.

  8. What is the total power dissipation at 25°C?

    The total power dissipation (PTOT) at TC = 25°C is 315 W.

  9. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±20 V.

  10. What is the drain-source breakdown voltage?

    The drain-source breakdown voltage (VBR(DSS)) is 100 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6665 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP180N10F3 STP185N10F3 STP130N10F3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 60A, 10V 4.8mOhm @ 60A, 10V 9.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V - 57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6665 pF @ 25 V - 3305 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 315W (Tc) 300W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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