STP141NF55
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STMicroelectronics STP141NF55

Manufacturer No:
STP141NF55
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 55V 80A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP141NF55 is a high-performance N-Channel power MOSFET designed and manufactured by STMicroelectronics. This device is part of STMicroelectronics' medium-voltage N-channel power MOSFET portfolio, which caters to a wide range of industrial and automotive applications. The STP141NF55 is known for its high power dissipation and robust performance, making it an ideal choice for demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
RDS(on) (On-Resistance)0.0065 Ω
ID (Continuous Drain Current)80 A
Package TypesD2PAK, I2PAK, TO-220
Avalanche CharacteristicsRugged

Key Features

  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Less critical alignment steps for improved manufacturing reproducibility
  • High power dissipation capability
  • Robust performance suitable for industrial and automotive applications

Applications

The STP141NF55 is designed for a broad range of applications, including:

  • Industrial power supplies and motor control systems
  • Automotive systems such as battery management, power steering, and electric vehicle charging
  • Power conversion and switching applications

Q & A

  1. What is the maximum drain-source voltage of the STP141NF55?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the on-resistance of the STP141NF55?
    The on-resistance (RDS(on)) is 0.0065 Ω.
  3. What is the continuous drain current rating of the STP141NF55?
    The continuous drain current (ID) is 80 A.
  4. What package types are available for the STP141NF55?
    The STP141NF55 is available in D2PAK, I2PAK, and TO-220 packages.
  5. What are the notable avalanche characteristics of the STP141NF55?
    The STP141NF55 has rugged avalanche characteristics.
  6. What are the primary applications of the STP141NF55?
    The primary applications include industrial power supplies, automotive systems, and power conversion and switching applications.
  7. Why is the STP141NF55 considered robust?
    The STP141NF55 is considered robust due to its high power dissipation capability and rugged avalanche characteristics.
  8. How does the STP141NF55 improve manufacturing reproducibility?
    The STP141NF55 improves manufacturing reproducibility by having less critical alignment steps.
  9. Where can I find detailed specifications for the STP141NF55?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors.
  10. Is the STP141NF55 suitable for high-power applications?
    Yes, the STP141NF55 is designed for high-power applications due to its high power dissipation and robust performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:142 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB141NF55
STB141NF55
MOSFET N-CH 55V 80A D2PAK
STB141NF55-1
STB141NF55-1
MOSFET N-CH 55V 80A I2PAK

Similar Products

Part Number STP141NF55 STP140NF55
Manufacturer STMicroelectronics STMicroelectronics
Product Status Last Time Buy Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V 142 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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