STP140NF55
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STMicroelectronics STP140NF55

Manufacturer No:
STP140NF55
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 55V 80A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP140NF55 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II series, known for its advanced “Single Feature Size™” strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP140NF55 is available in the TO-220 package and is designed for high current, high voltage applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)55V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C80A
Pulsed Drain Current (IDM)320A
Static Drain-Source On Resistance (RDS(on))<0.008Ω
Total Dissipation at TC = 25°C (PTOT)300W
Thermal Resistance Junction-Case (Rthj-case)0.5°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Maximum Lead Temperature for Soldering300°C

Key Features

  • Low on-resistance: <0.008 Ω at VGS = 10 V, ID = 40 A.
  • High current capability: Continuous drain current up to 80 A and pulsed current up to 320 A.
  • Rugged avalanche characteristics and high packing density.
  • Low gate charge and fast switching times.
  • ECOPACK® lead-free packages compliant with JEDEC Standard JESD97.

Applications

  • Motor control.
  • High current, switching applications.
  • Power management in industrial and automotive systems.

Q & A

  1. What is the maximum drain-source voltage of the STP140NF55?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of the STP140NF55?
    The continuous drain current (ID) is 80 A at TC = 25°C.
  3. What is the typical on-resistance of the STP140NF55?
    The typical static drain-source on-resistance (RDS(on)) is <0.008 Ω at VGS = 10 V, ID = 40 A.
  4. What are the thermal resistance values for the STP140NF55?
    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
  5. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C for 10 seconds, 1.6 mm from the case.
  6. What are the package options for the STP140NF55?
    The STP140NF55 is available in the TO-220 package.
  7. What are the key features of the STripFET™ II technology?
    The STripFET™ II technology offers low on-resistance, rugged avalanche characteristics, and high packing density.
  8. What are the typical applications of the STP140NF55?
    The typical applications include motor control and high current, switching applications.
  9. Is the STP140NF55 lead-free?
    Yes, the STP140NF55 is available in ECOPACK® lead-free packages.
  10. What is the gate threshold voltage range of the STP140NF55?
    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:142 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB140NF55T4
STB140NF55T4
MOSFET N-CH 55V 80A D2PAK

Similar Products

Part Number STP140NF55 STP141NF55 STP140NF75 STP150NF55
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Last Time Buy Active Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 8mOhm @ 40A, 10V 7.5mOhm @ 70A, 10V 6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V 142 nC @ 10 V 218 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 5300 pF @ 25 V 5000 pF @ 25 V 4400 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 310W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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