STLD125N4F6AG
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STMicroelectronics STLD125N4F6AG

Manufacturer No:
STLD125N4F6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STLD125N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which significantly enhances its performance by reducing on-resistance and gate charge. It is designed to meet the stringent requirements of automotive and industrial applications, offering high reliability and efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-Resistance) 2.4
PD (Total Dissipation) - -
TJ (Junction Temperature) -55 to 150 °C
Package PowerFLAT 5x6 Dual Side Cooling -
RoHS Compliance Ecopack2 -

Key Features

  • AEC-Q101 Qualified: Ensures the device meets automotive industry standards for reliability and performance.
  • Very Low On-Resistance: Reduces power losses and improves overall efficiency.
  • Very Low Gate Charge: Minimizes switching losses and enhances high-frequency performance.
  • High Avalanche Ruggedness: Provides robustness against transient events and ensures long-term reliability.
  • Low Gate Drive Power Loss: Optimizes gate drive requirements, reducing overall system power consumption.
  • Wettable Flank Package: Enhances solderability and reliability in high-volume manufacturing processes.

Applications

The STLD125N4F6AG is suitable for a wide range of applications, including:

  • Automotive Systems: Ideal for use in electric vehicles, hybrid vehicles, and other automotive power systems due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in motor control, power supplies, and other high-power industrial applications where high efficiency and reliability are crucial.
  • Power Conversion Systems: Suitable for DC-DC converters, inverters, and other power conversion applications requiring low on-resistance and high switching frequencies.

Q & A

  1. What is the STLD125N4F6AG?

    The STLD125N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology.

  2. What are the key features of the STLD125N4F6AG?

    Key features include very low on-resistance, very low gate charge, high avalanche ruggedness, low gate drive power loss, and AEC-Q101 qualification.

  3. What is the maximum drain-source voltage (VDS) of the STLD125N4F6AG?

    The maximum drain-source voltage is 40 V.

  4. What is the typical on-resistance (RDS(on)) of the STLD125N4F6AG?

    The typical on-resistance is 2.4 mΩ.

  5. What package type is the STLD125N4F6AG available in?

    The device is available in the PowerFLAT 5x6 Dual Side Cooling package.

  6. Is the STLD125N4F6AG RoHS compliant?

    Yes, the STLD125N4F6AG is RoHS compliant with an Ecopack2 grade.

  7. What are the typical applications for the STLD125N4F6AG?

    Typical applications include automotive systems, industrial power systems, and power conversion systems.

  8. What is the junction temperature range for the STLD125N4F6AG?

    The junction temperature range is -55°C to 150°C.

  9. Does the STLD125N4F6AG support high-frequency switching?

    Yes, the device is optimized for high-frequency switching due to its very low gate charge and low gate drive power loss.

  10. Where can I find more detailed technical specifications for the STLD125N4F6AG?

    Detailed technical specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) Dual Side
Package / Case:8-PowerWDFN
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