STLD125N4F6AG
  • Share:

STMicroelectronics STLD125N4F6AG

Manufacturer No:
STLD125N4F6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STLD125N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which significantly enhances its performance by reducing on-resistance and gate charge. It is designed to meet the stringent requirements of automotive and industrial applications, offering high reliability and efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-Resistance) 2.4
PD (Total Dissipation) - -
TJ (Junction Temperature) -55 to 150 °C
Package PowerFLAT 5x6 Dual Side Cooling -
RoHS Compliance Ecopack2 -

Key Features

  • AEC-Q101 Qualified: Ensures the device meets automotive industry standards for reliability and performance.
  • Very Low On-Resistance: Reduces power losses and improves overall efficiency.
  • Very Low Gate Charge: Minimizes switching losses and enhances high-frequency performance.
  • High Avalanche Ruggedness: Provides robustness against transient events and ensures long-term reliability.
  • Low Gate Drive Power Loss: Optimizes gate drive requirements, reducing overall system power consumption.
  • Wettable Flank Package: Enhances solderability and reliability in high-volume manufacturing processes.

Applications

The STLD125N4F6AG is suitable for a wide range of applications, including:

  • Automotive Systems: Ideal for use in electric vehicles, hybrid vehicles, and other automotive power systems due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in motor control, power supplies, and other high-power industrial applications where high efficiency and reliability are crucial.
  • Power Conversion Systems: Suitable for DC-DC converters, inverters, and other power conversion applications requiring low on-resistance and high switching frequencies.

Q & A

  1. What is the STLD125N4F6AG?

    The STLD125N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology.

  2. What are the key features of the STLD125N4F6AG?

    Key features include very low on-resistance, very low gate charge, high avalanche ruggedness, low gate drive power loss, and AEC-Q101 qualification.

  3. What is the maximum drain-source voltage (VDS) of the STLD125N4F6AG?

    The maximum drain-source voltage is 40 V.

  4. What is the typical on-resistance (RDS(on)) of the STLD125N4F6AG?

    The typical on-resistance is 2.4 mΩ.

  5. What package type is the STLD125N4F6AG available in?

    The device is available in the PowerFLAT 5x6 Dual Side Cooling package.

  6. Is the STLD125N4F6AG RoHS compliant?

    Yes, the STLD125N4F6AG is RoHS compliant with an Ecopack2 grade.

  7. What are the typical applications for the STLD125N4F6AG?

    Typical applications include automotive systems, industrial power systems, and power conversion systems.

  8. What is the junction temperature range for the STLD125N4F6AG?

    The junction temperature range is -55°C to 150°C.

  9. Does the STLD125N4F6AG support high-frequency switching?

    Yes, the device is optimized for high-frequency switching due to its very low gate charge and low gate drive power loss.

  10. Where can I find more detailed technical specifications for the STLD125N4F6AG?

    Detailed technical specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) Dual Side
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$3.56
227

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO