STL11N3LLH6
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STMicroelectronics STL11N3LLH6

Manufacturer No:
STL11N3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL11N3LLH6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is packaged in a PowerFLAT™ 3.3 x 3.3 mm package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
On-Resistance (Rds(on))0.006 Ω (typ.)
Continuous Drain Current (Id)11 A (Tc), 2 W (Ta), 50 W (Tc)
Package TypePowerFLAT™ 3.3 x 3.3 mm
TechnologySTripFET™ H6

Key Features

  • Low on-resistance (Rds(on)) of 0.006 Ω (typ.), reducing power losses and improving efficiency.
  • High continuous drain current of 11 A, suitable for high-power applications.
  • Compact PowerFLAT™ 3.3 x 3.3 mm package, ideal for space-constrained designs.
  • Advanced STripFET™ H6 technology with a new trench gate structure for enhanced performance.

Applications

The STL11N3LLH6 is versatile and can be used in various applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in consumer electronics and industrial equipment.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the STL11N3LLH6? The voltage rating (Vds) of the STL11N3LLH6 is 30 V.
  2. What is the typical on-resistance of the STL11N3LLH6? The typical on-resistance (Rds(on)) is 0.006 Ω.
  3. What is the continuous drain current of the STL11N3LLH6? The continuous drain current (Id) is 11 A (Tc), with power ratings of 2 W (Ta) and 50 W (Tc).
  4. What package type does the STL11N3LLH6 use? The STL11N3LLH6 is packaged in a PowerFLAT™ 3.3 x 3.3 mm package.
  5. What technology is used in the STL11N3LLH6? The STL11N3LLH6 uses the STripFET™ H6 technology.
  6. Where can I use the STL11N3LLH6? The STL11N3LLH6 can be used in DC-DC converters, motor control systems, power management in consumer electronics, and automotive systems.
  7. Why is the PowerFLAT™ package beneficial? The PowerFLAT™ package is beneficial due to its compact size, making it ideal for space-constrained designs.
  8. What are the advantages of the STripFET™ H6 technology? The STripFET™ H6 technology offers low on-resistance and enhanced performance due to its new trench gate structure.
  9. How does the STL11N3LLH6 improve efficiency in applications? The STL11N3LLH6 improves efficiency by reducing power losses through its low on-resistance.
  10. Is the STL11N3LLH6 suitable for high-power applications? Yes, the STL11N3LLH6 is suitable for high-power applications due to its high continuous drain current and power ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL11N3LLH6 STL17N3LLH6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 5.5A, 10V 4.5mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min) 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1690 pF @ 24 V 1690 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 50W (Tc) 2W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN

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