STL110NS3LLH7
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STMicroelectronics STL110NS3LLH7

Manufacturer No:
STL110NS3LLH7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 120A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL110NS3LLH7 is an N-channel Power MOSFET transistor manufactured by STMicroelectronics. This device is part of the STripFET™ H7 series and is known for its high performance and reliability. It features a drain-source voltage (Vdss) of 30V, a gate-source voltage (Vgs) of ±20V, and a continuous drain current (ID) of 120A. The STL110NS3LLH7 is packaged in a PowerFLAT™ 5x6 format, which is designed to optimize thermal performance and reduce the footprint. The device operates over a wide temperature range from -55°C to 150°C and has a maximum power dissipation of 75W at the case temperature (Tc).

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vdss) 30 V
Gate-Source Voltage (Vgs) ±20 V
Continuous Drain Current (ID) 120 A
Continuous Drain Current at Tc = 100 °C 75 A
Pulsed Drain Current (IDM) 480 A
Static Drain-Source On-Resistance (RDS(on)) 0.0027 - 0.0034 Ω
Total Dissipation at Tc = 25 °C 75 W
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-pcb (Rthj-pcb) 31.3 °C/W
Package PowerFLAT™ 5x6

Key Features

  • Very low on-resistance: The STL110NS3LLH7 has a low RDS(on) of 0.0027 - 0.0034 Ω, which enhances conduction and switching performance.
  • Very low Qg: The device features low total gate charge, contributing to efficient switching characteristics.
  • High avalanche ruggedness: This MOSFET is designed to withstand high avalanche currents, ensuring robust operation in demanding applications.
  • Embedded Schottky diode: The integrated Schottky diode improves the overall performance and reduces losses during switching.

Applications

  • Power Management: Suitable for various power management systems due to its high current handling and low on-resistance.
  • Consumer Electronics: Used in consumer electronics for efficient power handling and compact design.
  • Portable Devices: Ideal for portable devices requiring high power density and low thermal resistance.
  • Industrial: Applied in industrial applications where high reliability and performance are crucial.
  • Switching Applications: Optimized for switching applications due to its fast switching times and low capacitance.

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the STL110NS3LLH7?

    The maximum drain-source voltage (Vdss) is 30V.

  2. What is the continuous drain current (ID) of the STL110NS3LLH7?

    The continuous drain current (ID) is 120A.

  3. What is the typical on-resistance (RDS(on)) of the STL110NS3LLH7?

    The typical on-resistance (RDS(on)) is 0.0027 - 0.0034 Ω.

  4. What is the operating junction temperature range of the STL110NS3LLH7?

    The operating junction temperature range is -55°C to 150°C.

  5. What type of package does the STL110NS3LLH7 come in?

    The STL110NS3LLH7 is packaged in a PowerFLAT™ 5x6 format.

  6. Does the STL110NS3LLH7 have an embedded Schottky diode?
  7. What are some common applications of the STL110NS3LLH7?
  8. What is the maximum total dissipation at Tc = 25 °C for the STL110NS3LLH7?
  9. What is the thermal resistance junction-pcb (Rthj-pcb) of the STL110NS3LLH7?
  10. Is the STL110NS3LLH7 RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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$1.29
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Similar Products

Part Number STL110NS3LLH7 STL160NS3LLH7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 14A, 10V 2.1mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 4.5 V 20 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2110 pF @ 25 V 3245 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 4W (Ta), 75W (Tc) 84W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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