Overview
The STL160NS3LLH7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is designed to offer low on-state resistance and capacitance, enhancing its conduction and switching performance. It is part of the STripFET™ H6 technology family, which features a new trench gate structure for improved electrical characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tcase = 25 °C | 120 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Total Dissipation at Tcase = 25 °C (PTOT) | 136 | W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 60 A | 2.5 - 3.2 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 1.1 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Very low on-resistance (RDS(on))
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Improved conduction and switching performance due to low on-state resistance and capacitance
Applications
- Switching applications
- Sensorless Field-Oriented Control (FOC) algorithms with speed regulation and active braking
- Fast and efficient propulsion systems, such as those in remote control devices
Q & A
- What is the STL160NS3LLH7?
The STL160NS3LLH7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics.
- What is the maximum drain-source voltage (VDS) for the STL160NS3LLH7?
The maximum drain-source voltage (VDS) is 30 V.
- What is the continuous drain current (ID) at Tcase = 25 °C?
The continuous drain current (ID) at Tcase = 25 °C is 120 A.
- What is the typical static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 60 A?
The typical static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 60 A is 3.2 mΩ.
- What are the key features of the STL160NS3LLH7?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What are the typical applications of the STL160NS3LLH7?
The typical applications include switching applications, sensorless FOC algorithms, and fast and efficient propulsion systems.
- Is the STL160NS3LLH7 still in production?
No, the STL160NS3LLH7 is no longer manufactured and is listed as obsolete.
- What is the thermal resistance junction-case (Rthj-case) for the STL160NS3LLH7?
The thermal resistance junction-case (Rthj-case) is 1.1 °C/W.
- What is the gate threshold voltage (VGS(th)) range for the STL160NS3LLH7?
The gate threshold voltage (VGS(th)) range is 1 to 2.5 V.
- What package type is the STL160NS3LLH7 available in?
Although specific package details for the STL160NS3LLH7 are not provided, similar devices from STMicroelectronics are often available in packages like TO-220.
