STH290N4F6-2AG
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STMicroelectronics STH290N4F6-2AG

Manufacturer No:
STH290N4F6-2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 180A H2PAK-2
Delivery:
Payment:
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Product Introduction

Overview

The STH290N4F6-2AG is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. This device is designed to meet the demanding requirements of automotive and industrial switching applications. It features high current capability and low on-resistance, making it suitable for a variety of power management tasks.

Key Specifications

Specification Value
Channel Type N-Channel
Drain-Source Voltage (Vds) 40 V
Continuous Drain Current (Id) 180 A (at Tc)
Power Dissipation (Pd) 300 W (at Tc)
Package Type H2PAK-2
Avalanche Ruggedness High

Key Features

  • High current capability of up to 180 A at Tc.
  • Low on-resistance (Rds(on)) for efficient power handling.
  • High avalanche ruggedness, enhancing reliability in harsh environments.
  • Surface mount H2PAK-2 package for compact and efficient design.

Applications

  • Motor control systems.
  • Uninterruptible power supplies (UPS).
  • DC/DC converters.
  • Induction heater vaporizers.
  • Solar power systems.

Q & A

  1. What is the maximum drain-source voltage of the STH290N4F6-2AG?

    The maximum drain-source voltage (Vds) is 40 V.

  2. What is the continuous drain current rating of the STH290N4F6-2AG?

    The continuous drain current (Id) is 180 A at Tc.

  3. What is the power dissipation capability of the STH290N4F6-2AG?

    The power dissipation (Pd) is 300 W at Tc.

  4. What package type is used for the STH290N4F6-2AG?

    The package type is H2PAK-2.

  5. What are some typical applications for the STH290N4F6-2AG?

    Typical applications include motor control, UPS, DC/DC converters, induction heater vaporizers, and solar power systems.

  6. What is the significance of high avalanche ruggedness in the STH290N4F6-2AG?

    High avalanche ruggedness enhances the device's reliability and ability to withstand transient voltage spikes and other harsh conditions.

  7. Why is the STH290N4F6-2AG suitable for automotive applications?

    The device is suitable due to its high current capability, low on-resistance, and high avalanche ruggedness, which are critical for the demanding environments found in automotive systems.

  8. Can the STH290N4F6-2AG be used in industrial switching applications?

    Yes, it is designed for industrial switching applications due to its robust specifications and reliability features.

  9. What are the benefits of using the H2PAK-2 package for the STH290N4F6-2AG?

    The H2PAK-2 package offers a compact design and efficient thermal management, making it ideal for space-constrained and high-power applications.

  10. Where can I find detailed specifications and datasheets for the STH290N4F6-2AG?

    Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7380 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STH290N4F6-6AG
STH290N4F6-6AG
MOSFET N-CH 40V 180A H2PAK-6

Similar Products

Part Number STH290N4F6-2AG STH290N4F6-6AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 45A, 10V 1.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7380 pF @ 25 V 7380 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2PAK-6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)

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