STH265N6F6-2AG
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STMicroelectronics STH265N6F6-2AG

Manufacturer No:
STH265N6F6-2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 180A H2PAK-2
Delivery:
Payment:
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Product Introduction

Overview

The STH265N6F6-2AG is a high-performance N-channel MOSFET produced by STMicroelectronics. Although this component is currently obsolete and no longer manufactured, it was highly regarded for its robust specifications and applications in various power management systems. This MOSFET was particularly suited for high-power applications such as flyback converters and LED lighting due to its robust avalanche capabilities and Zener protection.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)180 A
RDS(on) (On-State Resistance)2.5 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PackageH2PAK-2

Key Features

  • Zener-protected to enhance reliability and robustness against voltage spikes.
  • 100% avalanche tested, ensuring high reliability in demanding applications.
  • Low on-state resistance (RDS(on)) of 2.5 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current (ID) of 180 A, making it suitable for high-power applications.

Applications

  • Flyback converters: Ideal for use in flyback converter designs due to its high voltage and current handling capabilities.
  • LED lighting: Suitable for LED lighting applications requiring high power and efficiency.
  • Power management systems: Can be used in various power management systems where high reliability and performance are critical.

Q & A

  1. What is the drain-source voltage (VDS) of the STH265N6F6-2AG MOSFET?
    The drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 180 A.
  3. What is the typical on-state resistance (RDS(on)) of the STH265N6F6-2AG?
    The typical on-state resistance (RDS(on)) is 2.5 mΩ at VGS = 10 V.
  4. What type of protection does the STH265N6F6-2AG MOSFET have?
    The STH265N6F6-2AG MOSFET is Zener-protected.
  5. Is the STH265N6F6-2AG MOSFET still in production?
    No, the STH265N6F6-2AG MOSFET is obsolete and no longer manufactured.
  6. What are some common applications of the STH265N6F6-2AG MOSFET?
    Common applications include flyback converters, LED lighting, and other high-power management systems.
  7. What is the package type of the STH265N6F6-2AG MOSFET?
    The package type is H2PAK-2.
  8. What is the threshold voltage (VGS(th)) range of the STH265N6F6-2AG?
    The threshold voltage (VGS(th)) range is 2.5 V to 4 V.
  9. Has the STH265N6F6-2AG MOSFET been avalanche tested?
    Yes, the STH265N6F6-2AG MOSFET has been 100% avalanche tested.
  10. What are some potential substitutes for the STH265N6F6-2AG MOSFET?
    Potential substitutes include the BUK962R8-60E,118 among others.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:183 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STH265N6F6-6AG
STH265N6F6-6AG
MOSFET N-CH 60V 180A H2PAK-6

Similar Products

Part Number STH265N6F6-2AG STH265N6F6-6AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 60A, 10V 2.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V 183 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11800 pF @ 25 V 11800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2PAK-6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)

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