STH240N10F7-6
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STMicroelectronics STH240N10F7-6

Manufacturer No:
STH240N10F7-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A H2PAK-6
Delivery:
Payment:
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Product Introduction

Overview

The STH240N10F7-6 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its low on-state resistance, enhanced trench gate structure, and reduced internal capacitance and gate charge, enabling faster and more efficient switching. It is packaged in an H²PAK-6 package, making it suitable for high-power applications requiring high current handling and low losses.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vdss)100V
Continuous Drain Current (ID) at TC = 25 °C180A
On-State Resistance (RDS(on))2 mΩ (typ.)Ω
Gate-Source Voltage (VGS)±20V
Total Dissipation at TC = 25 °C300W
Operating Junction Temperature Range-55 to 175°C
Thermal Resistance Junction-Case0.5°C/W
PackageH²PAK-6

Key Features

  • Low on-state resistance (RDS(on)) of 2 mΩ (typ.) for minimal power losses.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness for enhanced reliability.
  • Reduced internal capacitance and gate charge for faster switching times.

Applications

  • Amplifiers
  • Switching apparatuses
  • Power-supply inverters
  • Oscillators
  • Modulators
  • Detectors

Q & A

  1. What is the maximum drain-source voltage of the STH240N10F7-6?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 180 A.
  3. What is the typical on-state resistance of the STH240N10F7-6?
    The typical on-state resistance is 2 mΩ.
  4. What package type is the STH240N10F7-6 available in?
    The STH240N10F7-6 is available in an H²PAK-6 package.
  5. What is the operating junction temperature range of the STH240N10F7-6?
    The operating junction temperature range is -55 to 175 °C.
  6. What are the key features of the STripFET™ F7 technology used in the STH240N10F7-6?
    The key features include low on-state resistance, excellent FoM, low Crss/Ciss ratio for EMI immunity, high avalanche ruggedness, and reduced internal capacitance and gate charge.
  7. What are some common applications of the STH240N10F7-6?
    Common applications include amplifiers, switching apparatuses, power-supply inverters, oscillators, modulators, and detectors.
  8. Is the STH240N10F7-6 RoHS compliant?
    Yes, the STH240N10F7-6 is RoHS compliant and lead-free.
  9. What is the maximum total dissipation at 25 °C for the STH240N10F7-6?
    The maximum total dissipation at 25 °C is 300 W.
  10. What is the thermal resistance junction-case for the STH240N10F7-6?
    The thermal resistance junction-case is 0.5 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Same Series
STH240N10F7-2
STH240N10F7-2
MOSFET N-CH 100V 180A H2PAK-2

Similar Products

Part Number STH240N10F7-6 STH240N10F7-2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 60A, 10V 2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11550 pF @ 25 V 11550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2PAK-6 H2Pak-2
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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