Overview
The STH180N10F3-2 is an N-channel enhancement mode Power MOSFET developed by STMicroelectronics using their advanced STripFET F3 technology. This device is designed to minimize on-resistance and gate charge, providing superior performance in high-power applications. It is particularly suited for use in systems that require high efficiency, low thermal resistance, and robust reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 100 V |
| RDS(on) (On-Resistance) | 3.9 mΩ (typical) |
| ID (Continuous Drain Current) | 180 A |
| VGS (Gate-Source Voltage) | ±20 V |
| Package | H²PAK-2, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Key Features
- Low on-resistance (RDS(on)) of 3.9 mΩ (typical) to minimize power losses.
- High continuous drain current (ID) of 180 A.
- Advanced STripFET F3 technology for improved performance and reliability.
- Low gate charge to reduce switching losses.
- High voltage rating of 100 V for robust operation in various applications.
Applications
The STH180N10F3-2 is suitable for a wide range of high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Automotive systems, such as electric vehicles and hybrid vehicles.
- Industrial power systems and renewable energy systems.
- High-frequency switching applications.
Q & A
- What is the typical on-resistance of the STH180N10F3-2? The typical on-resistance (RDS(on)) is 3.9 mΩ.
- What is the maximum continuous drain current of the STH180N10F3-2? The maximum continuous drain current (ID) is 180 A.
- What technology is used in the STH180N10F3-2? The STH180N10F3-2 is developed using STMicroelectronics' STripFET F3 technology.
- What is the voltage rating of the STH180N10F3-2? The voltage rating (VDS) is 100 V.
- What are the available packages for the STH180N10F3-2? The available packages include H²PAK-2, TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB.
- What are some common applications for the STH180N10F3-2? Common applications include power supplies, motor control, automotive systems, industrial power systems, and high-frequency switching applications.
- What is the gate-source voltage rating of the STH180N10F3-2? The gate-source voltage rating (VGS) is ±20 V.
- Why is the STH180N10F3-2 considered efficient? It is considered efficient due to its low on-resistance and gate charge, which minimize power losses and switching losses.
- Is the STH180N10F3-2 suitable for high-power switching applications? Yes, it is suitable for high-power switching applications due to its high current and voltage ratings, as well as its low on-resistance.
- Where can I find detailed specifications for the STH180N10F3-2? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Farnell and Utmel.
