STH140N8F7-2
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STMicroelectronics STH140N8F7-2

Manufacturer No:
STH140N8F7-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH140N8F7-2 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of power management applications. The STH140N8F7-2 is housed in an H2PAK-2 package, which provides good thermal dissipation and is ideal for high-power density designs.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 80 V
RDS(on) (On-Resistance) 1.7 mΩ (typ.)
ID (Drain Current) 180 A
Package H2PAK-2
Operating Temperature Range -55°C to 150°C

Key Features

  • High current capability up to 180 A.
  • Low on-resistance (RDS(on)) of 1.7 mΩ (typ.).
  • High voltage rating of 80 V.
  • H2PAK-2 package for good thermal dissipation and high power density.
  • Wide operating temperature range from -55°C to 150°C.
  • Automotive-grade version available, ensuring reliability in harsh environments.

Applications

  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications, including DC-DC converters and power factor correction (PFC) circuits.
  • Electric bikes and scooters.

Q & A

  1. What is the maximum drain-source voltage of the STH140N8F7-2?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the typical on-resistance of the STH140N8F7-2?

    The typical on-resistance (RDS(on)) is 1.7 mΩ.

  3. What is the maximum drain current of the STH140N8F7-2?

    The maximum drain current (ID) is 180 A.

  4. In what package is the STH140N8F7-2 available?

    The STH140N8F7-2 is available in an H2PAK-2 package.

  5. What is the operating temperature range of the STH140N8F7-2?

    The operating temperature range is from -55°C to 150°C.

  6. Is the STH140N8F7-2 suitable for automotive applications?

    Yes, it is available in an automotive-grade version, ensuring reliability in harsh environments.

  7. What are some common applications of the STH140N8F7-2?

    Common applications include automotive systems, industrial power supplies, renewable energy systems, high-power switching applications, and electric bikes and scooters.

  8. How does the H2PAK-2 package benefit the STH140N8F7-2?

    The H2PAK-2 package provides good thermal dissipation and is ideal for high-power density designs.

  9. What are the advantages of low on-resistance in the STH140N8F7-2?

    Low on-resistance reduces power losses and improves overall efficiency in power management applications.

  10. Can the STH140N8F7-2 be used in high-frequency applications?

    Yes, the STH140N8F7-2 is suitable for high-frequency switching applications due to its low on-resistance and high current capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STH140N8F7-2 STH170N8F7-2 STH110N8F7-2 STH130N8F7-2 STH140N6F7-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 120A (Tc) 110A (Tc) 110A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 45A, 10V 3.7mOhm @ 60A, 10V 6.6mOhm @ 55A, 10V 5mOhm @ 55A, 10V 3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 120 nC @ 10 V 45 nC @ 10 V 60 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 40 V 8710 pF @ 40 V 3200 pF @ 25 V 4500 pF @ 25 V 2700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 250W (Tc) 170W (Tc) 205W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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