STMicroelectronics STH140N8F7-2

Manufacturer No:: STH140N8F7-2
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 80V 90A H2PAK-2
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Product Introduction

Overview

The STH140N8F7-2 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of power management applications. The STH140N8F7-2 is housed in an H2PAK-2 package, which provides good thermal dissipation and is ideal for high-power density designs.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	80 V
R_DS(on) (On-Resistance)	1.7 mΩ (typ.)
I_D (Drain Current)	180 A
Package	H2PAK-2
Operating Temperature Range	-55°C to 150°C

Key Features

High current capability up to 180 A.
Low on-resistance (R_DS(on)) of 1.7 mΩ (typ.).
High voltage rating of 80 V.
H2PAK-2 package for good thermal dissipation and high power density.
Wide operating temperature range from -55°C to 150°C.
Automotive-grade version available, ensuring reliability in harsh environments.

Applications

Automotive systems, including electric vehicles and hybrid vehicles.
Industrial power supplies and motor control systems.
Renewable energy systems, such as solar and wind power inverters.
High-power switching applications, including DC-DC converters and power factor correction (PFC) circuits.
Electric bikes and scooters.

Q & A

What is the maximum drain-source voltage of the STH140N8F7-2?
The maximum drain-source voltage (V_DS) is 80 V.
What is the typical on-resistance of the STH140N8F7-2?
The typical on-resistance (R_DS(on)) is 1.7 mΩ.
What is the maximum drain current of the STH140N8F7-2?
The maximum drain current (I_D) is 180 A.
In what package is the STH140N8F7-2 available?
The STH140N8F7-2 is available in an H2PAK-2 package.
What is the operating temperature range of the STH140N8F7-2?
The operating temperature range is from -55°C to 150°C.
Is the STH140N8F7-2 suitable for automotive applications?
Yes, it is available in an automotive-grade version, ensuring reliability in harsh environments.
What are some common applications of the STH140N8F7-2?
Common applications include automotive systems, industrial power supplies, renewable energy systems, high-power switching applications, and electric bikes and scooters.
How does the H2PAK-2 package benefit the STH140N8F7-2?
The H2PAK-2 package provides good thermal dissipation and is ideal for high-power density designs.
What are the advantages of low on-resistance in the STH140N8F7-2?
Low on-resistance reduces power losses and improves overall efficiency in power management applications.
Can the STH140N8F7-2 be used in high-frequency applications?
Yes, the STH140N8F7-2 is suitable for high-frequency switching applications due to its low on-resistance and high current capability.

In Stock

UnitPrice: $3.34

Quantity: 226

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Part Number	STH140N8F7-2	STH170N8F7-2	STH110N8F7-2	STH130N8F7-2	STH140N6F7-2
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Not For New Designs	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	80 V	80 V	80 V	60 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)	120A (Tc)	110A (Tc)	110A (Tc)	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	4mOhm @ 45A, 10V	3.7mOhm @ 60A, 10V	6.6mOhm @ 55A, 10V	5mOhm @ 55A, 10V	3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA	4.5V @ 250µA	4.5V @ 250µA	4.5V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V	120 nC @ 10 V	45 nC @ 10 V	60 nC @ 10 V	40 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	6340 pF @ 40 V	8710 pF @ 40 V	3200 pF @ 25 V	4500 pF @ 25 V	2700 pF @ 25 V
FET Feature	-	-	-	-	-
Power Dissipation (Max)	200W (Tc)	250W (Tc)	170W (Tc)	205W (Tc)	158W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	H2Pak-2	H2Pak-2	H2Pak-2	H2Pak-2	H2Pak-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	96 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6340 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	200W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2Pak-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STH140N8F7-2

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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