STH140N8F7-2
  • Share:

STMicroelectronics STH140N8F7-2

Manufacturer No:
STH140N8F7-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH140N8F7-2 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of power management applications. The STH140N8F7-2 is housed in an H2PAK-2 package, which provides good thermal dissipation and is ideal for high-power density designs.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 80 V
RDS(on) (On-Resistance) 1.7 mΩ (typ.)
ID (Drain Current) 180 A
Package H2PAK-2
Operating Temperature Range -55°C to 150°C

Key Features

  • High current capability up to 180 A.
  • Low on-resistance (RDS(on)) of 1.7 mΩ (typ.).
  • High voltage rating of 80 V.
  • H2PAK-2 package for good thermal dissipation and high power density.
  • Wide operating temperature range from -55°C to 150°C.
  • Automotive-grade version available, ensuring reliability in harsh environments.

Applications

  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications, including DC-DC converters and power factor correction (PFC) circuits.
  • Electric bikes and scooters.

Q & A

  1. What is the maximum drain-source voltage of the STH140N8F7-2?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the typical on-resistance of the STH140N8F7-2?

    The typical on-resistance (RDS(on)) is 1.7 mΩ.

  3. What is the maximum drain current of the STH140N8F7-2?

    The maximum drain current (ID) is 180 A.

  4. In what package is the STH140N8F7-2 available?

    The STH140N8F7-2 is available in an H2PAK-2 package.

  5. What is the operating temperature range of the STH140N8F7-2?

    The operating temperature range is from -55°C to 150°C.

  6. Is the STH140N8F7-2 suitable for automotive applications?

    Yes, it is available in an automotive-grade version, ensuring reliability in harsh environments.

  7. What are some common applications of the STH140N8F7-2?

    Common applications include automotive systems, industrial power supplies, renewable energy systems, high-power switching applications, and electric bikes and scooters.

  8. How does the H2PAK-2 package benefit the STH140N8F7-2?

    The H2PAK-2 package provides good thermal dissipation and is ideal for high-power density designs.

  9. What are the advantages of low on-resistance in the STH140N8F7-2?

    Low on-resistance reduces power losses and improves overall efficiency in power management applications.

  10. Can the STH140N8F7-2 be used in high-frequency applications?

    Yes, the STH140N8F7-2 is suitable for high-frequency switching applications due to its low on-resistance and high current capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.34
226

Please send RFQ , we will respond immediately.

Similar Products

Part Number STH140N8F7-2 STH170N8F7-2 STH110N8F7-2 STH130N8F7-2 STH140N6F7-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 120A (Tc) 110A (Tc) 110A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 45A, 10V 3.7mOhm @ 60A, 10V 6.6mOhm @ 55A, 10V 5mOhm @ 55A, 10V 3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 120 nC @ 10 V 45 nC @ 10 V 60 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 40 V 8710 pF @ 40 V 3200 pF @ 25 V 4500 pF @ 25 V 2700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 250W (Tc) 170W (Tc) 205W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN