STH140N8F7-2
  • Share:

STMicroelectronics STH140N8F7-2

Manufacturer No:
STH140N8F7-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH140N8F7-2 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of power management applications. The STH140N8F7-2 is housed in an H2PAK-2 package, which provides good thermal dissipation and is ideal for high-power density designs.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 80 V
RDS(on) (On-Resistance) 1.7 mΩ (typ.)
ID (Drain Current) 180 A
Package H2PAK-2
Operating Temperature Range -55°C to 150°C

Key Features

  • High current capability up to 180 A.
  • Low on-resistance (RDS(on)) of 1.7 mΩ (typ.).
  • High voltage rating of 80 V.
  • H2PAK-2 package for good thermal dissipation and high power density.
  • Wide operating temperature range from -55°C to 150°C.
  • Automotive-grade version available, ensuring reliability in harsh environments.

Applications

  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications, including DC-DC converters and power factor correction (PFC) circuits.
  • Electric bikes and scooters.

Q & A

  1. What is the maximum drain-source voltage of the STH140N8F7-2?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the typical on-resistance of the STH140N8F7-2?

    The typical on-resistance (RDS(on)) is 1.7 mΩ.

  3. What is the maximum drain current of the STH140N8F7-2?

    The maximum drain current (ID) is 180 A.

  4. In what package is the STH140N8F7-2 available?

    The STH140N8F7-2 is available in an H2PAK-2 package.

  5. What is the operating temperature range of the STH140N8F7-2?

    The operating temperature range is from -55°C to 150°C.

  6. Is the STH140N8F7-2 suitable for automotive applications?

    Yes, it is available in an automotive-grade version, ensuring reliability in harsh environments.

  7. What are some common applications of the STH140N8F7-2?

    Common applications include automotive systems, industrial power supplies, renewable energy systems, high-power switching applications, and electric bikes and scooters.

  8. How does the H2PAK-2 package benefit the STH140N8F7-2?

    The H2PAK-2 package provides good thermal dissipation and is ideal for high-power density designs.

  9. What are the advantages of low on-resistance in the STH140N8F7-2?

    Low on-resistance reduces power losses and improves overall efficiency in power management applications.

  10. Can the STH140N8F7-2 be used in high-frequency applications?

    Yes, the STH140N8F7-2 is suitable for high-frequency switching applications due to its low on-resistance and high current capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.34
226

Please send RFQ , we will respond immediately.

Similar Products

Part Number STH140N8F7-2 STH170N8F7-2 STH110N8F7-2 STH130N8F7-2 STH140N6F7-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 120A (Tc) 110A (Tc) 110A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 45A, 10V 3.7mOhm @ 60A, 10V 6.6mOhm @ 55A, 10V 5mOhm @ 55A, 10V 3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 120 nC @ 10 V 45 nC @ 10 V 60 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 40 V 8710 pF @ 40 V 3200 pF @ 25 V 4500 pF @ 25 V 2700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 250W (Tc) 170W (Tc) 205W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1

Related Product By Brand

BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA