STFU13N80K5
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STMicroelectronics STFU13N80K5

Manufacturer No:
STFU13N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 12A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STFU13N80K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K5 series. This device is designed for high-power applications requiring low on-resistance and high switching efficiency. The STFU13N80K5 is housed in a TO-220FP ultra narrow leads package, making it suitable for applications where space is limited but high power handling is necessary.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
On-Resistance (Rds(on))0.37 Ohm (typ.)
Drain Current (Id)12 A
PackageTO-220FP ultra narrow leads
Gate Threshold Voltage (Vth)2-4 V
Maximum Junction Temperature (Tj)150°C

Key Features

  • Low on-resistance (Rds(on)) of 0.37 Ohm (typ.) for high efficiency.
  • High voltage rating of 800 V, suitable for high-power applications.
  • High drain current capability of 12 A.
  • Compact TO-220FP ultra narrow leads package for space-saving designs.
  • High switching speed and low switching losses.
  • Automotive-grade options available for certain variants.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power systems and renewable energy systems.

Q & A

  1. What is the voltage rating of the STFU13N80K5? The voltage rating (Vds) of the STFU13N80K5 is 800 V.
  2. What is the typical on-resistance of the STFU13N80K5? The typical on-resistance (Rds(on)) is 0.37 Ohm.
  3. What is the maximum drain current of the STFU13N80K5? The maximum drain current (Id) is 12 A.
  4. In what package is the STFU13N80K5 available? The STFU13N80K5 is available in a TO-220FP ultra narrow leads package.
  5. What are the typical applications of the STFU13N80K5? Typical applications include power supplies, motor control, high-frequency switching, automotive systems, and industrial power systems.
  6. What is the maximum junction temperature of the STFU13N80K5? The maximum junction temperature (Tj) is 150°C.
  7. Is the STFU13N80K5 suitable for automotive applications? Yes, the STFU13N80K5 is suitable for automotive applications, including electric and hybrid vehicles.
  8. What are the benefits of the MDmesh K5 technology? The MDmesh K5 technology offers low on-resistance, high switching speed, and low switching losses, making it highly efficient for high-power applications.
  9. Where can I find detailed specifications for the STFU13N80K5? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and through distributors like Digi-Key.
  10. Is the STFU13N80K5 available in other packages? No, the STFU13N80K5 is specifically available in the TO-220FP ultra narrow leads package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STFU13N80K5 STFU23N80K5 STFU15N80K5 STFI13N80K5 STFU10N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16A (Tc) 14A (Tc) 12A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 6A, 10V 280mOhm @ 8A, 10V 375mOhm @ 7A, 10V 450mOhm @ 6A, 10V 600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 33 nC @ 10 V 32 nC @ 10 V 29 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V 1000 pF @ 100 V 1100 pF @ 100 V 870 pF @ 100 V 635 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 35W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP I2PAKFP (TO-281) TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-262-3 Full Pack, I²Pak TO-220-3 Full Pack

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