Overview
The STF26NM60N-H is a high-performance N-Channel Power MOSFET developed by STMicroelectronics. This device is renowned for its innovative design, combining a vertical structure with the company's strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for high-efficiency and high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 26 A |
| Rds(on) - On Resistance | Typically 26 mΩ at Vgs = 10 V |
| Gate Charge (Qg) | Low gate charge |
| Input Capacitance (Ciss) | Low input capacitance |
Key Features
- Low on-resistance (Rds(on)) and gate charge (Qg), enhancing efficiency and reducing switching losses.
- High drain-source breakdown voltage (Vds) of 600 V, suitable for high-voltage applications.
- Low input capacitance and gate input resistance, facilitating easier control and faster switching times.
- 100% avalanche tested, ensuring robustness and reliability under various operating conditions.
Applications
The STF26NM60N-H is designed for a variety of high-power and high-efficiency applications, including:
- Switching applications in power supplies, motor drives, and DC-DC converters.
- High-frequency switching circuits where low on-resistance and gate charge are critical.
- Industrial and automotive systems requiring high reliability and performance.
Q & A
- What is the package type of the STF26NM60N-H?
The STF26NM60N-H comes in a TO-220-3 package. - What is the drain-source breakdown voltage (Vds) of the STF26NM60N-H?
The drain-source breakdown voltage (Vds) is 600 V. - What are the key benefits of the low on-resistance and gate charge in the STF26NM60N-H?
The low on-resistance and gate charge enhance efficiency, reduce switching losses, and facilitate faster switching times. - Is the STF26NM60N-H suitable for high-frequency switching applications?
Yes, it is suitable due to its low input capacitance and gate input resistance. - What types of applications can the STF26NM60N-H be used in?
It can be used in switching applications, power supplies, motor drives, DC-DC converters, and high-frequency switching circuits. - Is the STF26NM60N-H 100% avalanche tested?
Yes, it is 100% avalanche tested, ensuring robustness and reliability. - What is the continuous drain current (Id) rating of the STF26NM60N-H?
The continuous drain current (Id) rating is 26 A. - Why is the strip layout design important in the STF26NM60N-H?
The strip layout design contributes to the device's low on-resistance and gate charge, making it highly efficient. - Where can I find detailed specifications and datasheets for the STF26NM60N-H?
Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as on distributor sites like Mouser and Digi-Key. - Is the STF26NM60N-H suitable for automotive applications?
Yes, it is suitable for automotive and industrial systems due to its high reliability and performance.
