STF20N65M5
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STMicroelectronics STF20N65M5

Manufacturer No:
STF20N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 18A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF20N65M5 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series. This device is designed to offer superior power density and outstanding efficiency, making it ideal for various high-power applications. The STF20N65M5 features a 650 V drain-source voltage rating, a typical on-resistance of 0.160 Ω, and a continuous drain current of 18 A. It is available in the TO-220FP package, which is RoHS compliant and Ecopack2 certified, ensuring environmental sustainability.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)650V
Drain Current (ID) Continuous at TC = 25 °C18A
Drain Current (ID) Continuous at TC = 100 °C11.3A
Drain Current (IDM) Pulsed72A
Static Drain-Source On-Resistance (RDS(on))0.160Ω
Gate-Source Voltage (VGS)± 25V
Gate Threshold Voltage (VGS(th))3 - 5V
Thermal Resistance Junction-Case (Rthj-case)0.96°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Maximum Operating Junction Temperature (Tj)150°C
PackageTO-220FP

Key Features

  • Worldwide best RDS(on) * area, ensuring extremely low on-resistance.
  • Higher VDSS rating and high dv/dt capability, making it suitable for high-power applications.
  • Excellent switching performance due to its innovative vertical process technology combined with STMicroelectronics’ PowerMESH™ horizontal layout structure.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Ecopack2 certified and RoHS compliant, emphasizing environmental sustainability.

Applications

The STF20N65M5 is particularly suited for switching applications that require superior power density and high efficiency. These include but are not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power audio amplifiers.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage of the STF20N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance of the STF20N65M5?
    The typical on-resistance (RDS(on)) is 0.160 Ω.
  3. What is the continuous drain current rating at 25 °C?
    The continuous drain current (ID) at 25 °C is 18 A.
  4. What package is the STF20N65M5 available in?
    The STF20N65M5 is available in the TO-220FP package.
  5. Is the STF20N65M5 RoHS compliant?
    Yes, the STF20N65M5 is RoHS compliant and Ecopack2 certified.
  6. What are the key features of the STF20N65M5?
    The key features include worldwide best RDS(on) * area, higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.
  7. What are some common applications for the STF20N65M5?
    Common applications include power supplies, DC-DC converters, motor control systems, high-power audio amplifiers, and industrial and automotive power systems.
  8. What is the maximum operating junction temperature of the STF20N65M5?
    The maximum operating junction temperature (Tj) is 150 °C.
  9. What is the gate-source voltage range for the STF20N65M5?
    The gate-source voltage (VGS) range is ± 25 V.
  10. Is the STF20N65M5 suitable for high-power switching applications?
    Yes, it is highly suitable due to its excellent switching performance and high power handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1345 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF20N65M5 STF21N65M5 STF30N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1345 pF @ 100 V 1950 pF @ 100 V 2880 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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