STF15NM65N
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STMicroelectronics STF15NM65N

Manufacturer No:
STF15NM65N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 12A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF15NM65N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device leverages ST's advanced STripFET F8 technology, which combines a vertical structure with a strip layout to achieve one of the world's lowest on-resistance and gate charge. This technology enhances the device's efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Continuous Drain Current)15.5 A
RDS(on) (On-Resistance)0.25 Ω
VGS(th) (Threshold Voltage)2-4 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageTO-220, TO-220FP, D2PAK, I2PAK, TO-247

Key Features

  • Enhanced trench gate structure using STripFET F8 technology
  • Low on-resistance (RDS(on)) of 0.25 Ω
  • Low gate charge
  • 800V, Zener-protected
  • 100% avalanche tested
  • Ideal for flyback converters and LED lighting applications

Applications

The STF15NM65N is particularly suited for high-efficiency power conversion applications, including:

  • Flyback converters
  • LED lighting systems
  • Power supplies
  • Motor control systems
  • Other high-power switching applications

Q & A

  1. What is the maximum drain-source voltage of the STF15NM65N?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the continuous drain current rating of the STF15NM65N?
    The continuous drain current (ID) is 15.5 A.
  3. What is the on-resistance of the STF15NM65N?
    The on-resistance (RDS(on)) is 0.25 Ω.
  4. What technology does the STF15NM65N use?
    The STF15NM65N uses ST's STripFET F8 technology.
  5. What are the typical applications for the STF15NM65N?
    The device is ideal for flyback converters, LED lighting, power supplies, and other high-power switching applications.
  6. Is the STF15NM65N Zener-protected?
    Yes, the STF15NM65N is 800V, Zener-protected.
  7. What packages are available for the STF15NM65N?
    The device is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.
  8. Has the STF15NM65N been avalanche tested?
    Yes, the STF15NM65N has been 100% avalanche tested.
  9. What is the significance of low gate charge in the STF15NM65N?
    A low gate charge reduces the switching losses and improves the overall efficiency of the device.
  10. Where can I find detailed specifications for the STF15NM65N?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.3 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:983 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF15NM65N STF19NM65N STF10NM65N STF11NM65N STF14NM65N STF15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 15.5A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V 270mOhm @ 7.75A, 10V 480mOhm @ 4.5A, 10V 455mOhm @ 5.5A, 10V 380mOhm @ 6A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V 55 nC @ 10 V 25 nC @ 10 V 29 nC @ 10 V 45 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 983 pF @ 50 V 1900 pF @ 50 V 850 pF @ 50 V 800 pF @ 50 V 1300 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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