STF100N6F7
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STMicroelectronics STF100N6F7

Manufacturer No:
STF100N6F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 46A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF100N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These features enable faster and more efficient switching, making it suitable for a variety of high-performance applications.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 60 V
VGS (Gate-source voltage) ±20 V
ID (Drain current, continuous) at TC = 25 °C 100 A
ID (Drain current, continuous) at TC = 100 °C 75 A
IDM (Drain current, pulsed) 400 A
PTOT (Total dissipation) at TC = 25 °C 125 W
EAS (Single pulse avalanche energy) 200 mJ
Tj (Operating junction temperature) -55 to 175 °C
RDS(on) (Static drain-source on-resistance) at VGS = 10 V, ID = 50 A 4.7 - 5.6 mΩ
Ciss (Input capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz - 1980 - pF
Coss (Output capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz - 970 - pF
Crss (Reverse transfer capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz - 86 - pF
Qg (Total gate charge) at VDD = 30 V, ID = 100 A, VGS = 10 V - 30 - nC

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 4.7 mΩ at VGS = 10 V and ID = 50 A.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness.
  • Enhanced trench gate structure for reduced internal capacitance and gate charge, enabling faster switching.

Applications

  • Switching applications, including power supplies, motor drives, and high-frequency switching circuits.
  • Industrial and automotive systems requiring high power handling and efficiency.
  • Power management systems in various electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF100N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STF100N6F7?

    The typical on-state resistance (RDS(on)) is 4.7 mΩ at VGS = 10 V and ID = 50 A.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 100 A.

  4. What is the total dissipation (PTOT) at 25 °C?

    The total dissipation (PTOT) at 25 °C is 125 W.

  5. What is the operating junction temperature range?

    The operating junction temperature range is -55 to 175 °C.

  6. What are the key features of the STripFET™ F7 technology?

    The key features include very low on-state resistance, reduced internal capacitance, and gate charge, as well as high avalanche ruggedness and low Crss/Ciss ratio for EMI immunity.

  7. In what package is the STF100N6F7 available?

    The STF100N6F7 is available in a TO-220FP package.

  8. What are some typical applications for the STF100N6F7?

    Typical applications include switching power supplies, motor drives, and other high-frequency switching circuits.

  9. What is the single pulse avalanche energy (EAS) of the STF100N6F7?

    The single pulse avalanche energy (EAS) is 200 mJ.

  10. What is the gate-source leakage current (IGSS) at VGS = 20 V?

    The gate-source leakage current (IGSS) at VGS = 20 V is 100 nA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1980 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF100N6F7 STF140N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 23A, 10V 3.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 25 V 3100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 33W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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