Overview
The STF100N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These features enable faster and more efficient switching, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 60 | V |
| VGS (Gate-source voltage) | ±20 | V |
| ID (Drain current, continuous) at TC = 25 °C | 100 | A |
| ID (Drain current, continuous) at TC = 100 °C | 75 | A |
| IDM (Drain current, pulsed) | 400 | A |
| PTOT (Total dissipation) at TC = 25 °C | 125 | W |
| EAS (Single pulse avalanche energy) | 200 | mJ |
| Tj (Operating junction temperature) | -55 to 175 | °C |
| RDS(on) (Static drain-source on-resistance) at VGS = 10 V, ID = 50 A | 4.7 - 5.6 | mΩ |
| Ciss (Input capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz | - 1980 - | pF |
| Coss (Output capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz | - 970 - | pF |
| Crss (Reverse transfer capacitance) at VGS = 0 V, VDS = 25 V, f = 1 MHz | - 86 - | pF |
| Qg (Total gate charge) at VDD = 30 V, ID = 100 A, VGS = 10 V | - 30 - | nC |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 4.7 mΩ at VGS = 10 V and ID = 50 A.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness.
- Enhanced trench gate structure for reduced internal capacitance and gate charge, enabling faster switching.
Applications
- Switching applications, including power supplies, motor drives, and high-frequency switching circuits.
- Industrial and automotive systems requiring high power handling and efficiency.
- Power management systems in various electronic devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF100N6F7?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-state resistance (RDS(on)) of the STF100N6F7?
The typical on-state resistance (RDS(on)) is 4.7 mΩ at VGS = 10 V and ID = 50 A.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 100 A.
- What is the total dissipation (PTOT) at 25 °C?
The total dissipation (PTOT) at 25 °C is 125 W.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 175 °C.
- What are the key features of the STripFET™ F7 technology?
The key features include very low on-state resistance, reduced internal capacitance, and gate charge, as well as high avalanche ruggedness and low Crss/Ciss ratio for EMI immunity.
- In what package is the STF100N6F7 available?
The STF100N6F7 is available in a TO-220FP package.
- What are some typical applications for the STF100N6F7?
Typical applications include switching power supplies, motor drives, and other high-frequency switching circuits.
- What is the single pulse avalanche energy (EAS) of the STF100N6F7?
The single pulse avalanche energy (EAS) is 200 mJ.
- What is the gate-source leakage current (IGSS) at VGS = 20 V?
The gate-source leakage current (IGSS) at VGS = 20 V is 100 nA.
