STD70N10F4
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STMicroelectronics STD70N10F4

Manufacturer No:
STD70N10F4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 60A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD70N10F4 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ DeepGATE™ technology. This device is designed to minimize on-state resistance and enhance switching performance, making it ideal for various high-power applications. With its new gate structure, the STD70N10F4 offers superior switching capabilities and exceptional dv/dt handling.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Gate-Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C60A
Continuous Drain Current (ID) at TC = 100°C43A
Pulsed Drain Current (IDM)240A
Total Dissipation at TC = 25°C (PTOT)125W
Derating Factor0.83W/°C
Single Pulse Avalanche Energy (EAS)120mJ
Storage Temperature (Tstg)-55 to 175°C
Maximum Operating Junction Temperature (Tj)-°C
Thermal Resistance Junction-Case (Rthj-case)1.2°C/W
Thermal Resistance Junction-Ambient (Rthj-a)50°C/W
Maximum Lead Temperature for Soldering (Tl)300°C
Static Drain-Source On Resistance (RDS(on))< 0.0195Ω
Gate Threshold Voltage (VGS(th))2-4V

Key Features

  • Exceptional dv/dt capability
  • Extremely low on-resistance (RDS(on))
  • 100% avalanche tested
  • Superior switching performance due to advanced STripFET™ DeepGATE™ technology
  • Available in various packages including TO-220, DPAK, TO-247, and D²PAK

Applications

The STD70N10F4 is suitable for a wide range of high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Aerospace and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD70N10F4?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is 60 A.
  3. What is the thermal resistance junction-case (Rthj-case) for the DPAK package?
    The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.2 °C/W.
  4. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is 2-4 V.
  5. What are the available packages for the STD70N10F4?
    The STD70N10F4 is available in TO-220, DPAK, TO-247, and D²PAK packages.
  6. What is the maximum operating junction temperature (Tj)?
    The maximum operating junction temperature (Tj) is not explicitly stated but typically should not exceed 175°C for safe operation.
  7. What is the single pulse avalanche energy (EAS)?
    The single pulse avalanche energy (EAS) is 120 mJ.
  8. What is the derating factor for total dissipation?
    The derating factor for total dissipation is 0.83 W/°C.
  9. Is the STD70N10F4 100% avalanche tested?
    Yes, the STD70N10F4 is 100% avalanche tested.
  10. What are some typical applications for the STD70N10F4?
    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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