Overview
The STD70N10F4 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ DeepGATE™ technology. This device is designed to minimize on-state resistance and enhance switching performance, making it ideal for various high-power applications. With its new gate structure, the STD70N10F4 offers superior switching capabilities and exceptional dv/dt handling.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 60 | A |
| Continuous Drain Current (ID) at TC = 100°C | 43 | A |
| Pulsed Drain Current (IDM) | 240 | A |
| Total Dissipation at TC = 25°C (PTOT) | 125 | W |
| Derating Factor | 0.83 | W/°C |
| Single Pulse Avalanche Energy (EAS) | 120 | mJ |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Maximum Operating Junction Temperature (Tj) | - | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 1.2 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-a) | 50 | °C/W |
| Maximum Lead Temperature for Soldering (Tl) | 300 | °C |
| Static Drain-Source On Resistance (RDS(on)) | < 0.0195 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
Key Features
- Exceptional dv/dt capability
- Extremely low on-resistance (RDS(on))
- 100% avalanche tested
- Superior switching performance due to advanced STripFET™ DeepGATE™ technology
- Available in various packages including TO-220, DPAK, TO-247, and D²PAK
Applications
The STD70N10F4 is suitable for a wide range of high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Aerospace and automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source voltage (VDS) of the STD70N10F4?
The maximum drain-source voltage (VDS) is 100 V. - What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 60 A. - What is the thermal resistance junction-case (Rthj-case) for the DPAK package?
The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.2 °C/W. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2-4 V. - What are the available packages for the STD70N10F4?
The STD70N10F4 is available in TO-220, DPAK, TO-247, and D²PAK packages. - What is the maximum operating junction temperature (Tj)?
The maximum operating junction temperature (Tj) is not explicitly stated but typically should not exceed 175°C for safe operation. - What is the single pulse avalanche energy (EAS)?
The single pulse avalanche energy (EAS) is 120 mJ. - What is the derating factor for total dissipation?
The derating factor for total dissipation is 0.83 W/°C. - Is the STD70N10F4 100% avalanche tested?
Yes, the STD70N10F4 is 100% avalanche tested. - What are some typical applications for the STD70N10F4?
Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.
