STD6NF10T4
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STMicroelectronics STD6NF10T4

Manufacturer No:
STD6NF10T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STD6NF10T4 is an N-Channel MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F8 technology. This device is designed for high-efficiency and high-frequency applications, particularly in isolated DC-DC converters. It features an enhanced trench gate structure, making it ideal for use in flyback converters and LED lighting systems. The MOSFET is known for its low input capacitance and minimized gate charge, enhancing its performance in high-frequency operations.

Key Specifications

ParameterValue
Maximum Drain Source Voltage100 V
Maximum Continuous Drain Current6 A (Tc)
On-State Resistance (Rds(on))100 mΩ @ 10 V, 10 A
Package TypeDPAK (TO-252)
Power Dissipation (Pd)30 W (Tc)
Threshold Voltage (Vth)2 V @ 250 μA

Key Features

  • Utilizes STMicroelectronics' STripFET F8 technology with an enhanced trench gate structure.
  • 800V Zener-protected and 100% avalanche tested.
  • Low input capacitance and minimized gate charge.
  • Ideal for flyback converters and LED lighting systems.
  • Suitable as the primary switch in high-efficiency, high-frequency isolated DC-DC converters.

Applications

  • High-efficiency, high-frequency isolated DC-DC converters.
  • Telecom and computer applications.
  • Flyback converters.
  • LED lighting systems.

Q & A

  1. What is the maximum drain source voltage of the STD6NF10T4 MOSFET?
    The maximum drain source voltage is 100 V.
  2. What is the maximum continuous drain current of the STD6NF10T4?
    The maximum continuous drain current is 6 A (Tc).
  3. What is the on-state resistance (Rds(on)) of the STD6NF10T4?
    The on-state resistance is 100 mΩ @ 10 V, 10 A.
  4. What package type does the STD6NF10T4 use?
    The package type is DPAK (TO-252).
  5. What is the power dissipation (Pd) of the STD6NF10T4?
    The power dissipation is 30 W (Tc).
  6. What is the threshold voltage (Vth) of the STD6NF10T4?
    The threshold voltage is 2 V @ 250 μA.
  7. What technology does the STD6NF10T4 utilize?
    The STD6NF10T4 utilizes STMicroelectronics' STripFET F8 technology.
  8. Is the STD6NF10T4 suitable for high-frequency applications?
    Yes, it is designed for high-frequency applications.
  9. What are some common applications of the STD6NF10T4?
    Common applications include flyback converters, LED lighting systems, and high-efficiency DC-DC converters for telecom and computer systems.
  10. Is the STD6NF10T4 Zener-protected and avalanche tested?
    Yes, it is 800V Zener-protected and 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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