STD45NF75T4
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STMicroelectronics STD45NF75T4

Manufacturer No:
STD45NF75T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 40A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD45NF75T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, which is designed to minimize input capacitance and gate charge, making it suitable for advanced high-efficiency isolated DC-DC converters. The STD45NF75T4 is packaged in a DPAK (TO-252) package and is AEC-Q101 qualified, ensuring its reliability in automotive and industrial applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 75 V
Gate-source voltage (VGS) ±20 V
Continuous drain current (ID) at TC = 25 °C 40 A
Continuous drain current (ID) at TC = 100 °C 30 A
Pulsed drain current (IDM) 160 A
Total dissipation at TC = 25 °C (PTOT) 125 W
Static drain-source on-resistance (RDS(on)) 18 - 24
Gate threshold voltage (VGS(th)) 2 - 4 V
Total gate charge (Qg) 60 - 80 nC
Thermal resistance junction-case (Rthj-case) 1.2 °C/W
Thermal resistance junction-pcb (Rthj-pcb) 50 °C/W

Key Features

  • AEC-Q101 qualified, ensuring automotive-grade reliability.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge due to STripFET™ II technology.
  • High efficiency suitable for isolated DC-DC converters.
  • Available in DPAK (TO-252) package.
  • ECOPACK® compliant for environmental sustainability.

Applications

The STD45NF75T4 is particularly suited for:

  • Advanced high-efficiency isolated DC-DC converters.
  • Telecom and computer applications.
  • Automotive and industrial applications requiring high reliability.
  • Any application with low gate charge driving requirements.

Q & A

  1. What is the maximum drain-source voltage of the STD45NF75T4?

    The maximum drain-source voltage (VDS) is 75 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 40 A at 25 °C and 30 A at 100 °C.

  3. What is the pulsed drain current capability of the STD45NF75T4?

    The pulsed drain current (IDM) is 160 A.

  4. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is between 18 and 24 mΩ.

  5. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is between 2 and 4 V.

  6. What is the total gate charge (Qg) of the STD45NF75T4?

    The total gate charge (Qg) is between 60 and 80 nC.

  7. What are the thermal resistance values for junction-case and junction-pcb?

    The thermal resistance junction-case (Rthj-case) is 1.2 °C/W, and the thermal resistance junction-pcb (Rthj-pcb) is 50 °C/W.

  8. Is the STD45NF75T4 AEC-Q101 qualified?

    Yes, the STD45NF75T4 is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What package type is the STD45NF75T4 available in?

    The STD45NF75T4 is available in a DPAK (TO-252) package.

  10. What are some typical applications for the STD45NF75T4?

    Typical applications include advanced high-efficiency isolated DC-DC converters, telecom and computer applications, and automotive and industrial applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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