STD2N105K5
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STMicroelectronics STD2N105K5

Manufacturer No:
STD2N105K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1050V 1.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD2N105K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications that require high power density and efficiency. The STD2N105K5 is packaged in a DPAK (TO-252) package, which is suitable for various industrial applications. The MOSFET features a proprietary vertical structure that significantly reduces on-resistance, enhancing its performance in switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1050 V
RDS(on) (Drain-Source On-Resistance) 6 (typ.) Ω
ID (Drain Current, continuous at TC = 25 °C) 1.5 A
ID (Drain Current, continuous at TC = 100 °C) 0.95 A
IDM (Drain Current, pulsed) 6 A
PTOT (Total Power Dissipation at TC = 25 °C) 60 W
VGS (Gate-Source Voltage) ±30 V
Tstg (Storage Temperature Range) -55 to 150 °C
TJ (Operating Junction Temperature Range) -55 to 150 °C
RthJC (Thermal Resistance, Junction-to-Case) 2.08 °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 50 °C/W

Key Features

  • Industry’s lowest RDS(on) x area and best figure of merit (FoM)
  • Ultra-low gate charge for high efficiency
  • 100% avalanche tested for reliability
  • Zener-protected gate for enhanced robustness
  • MDmesh K5 technology for superior power density
  • DPAK (TO-252) package for compact and efficient design
  • ECOPACK compliant for environmental sustainability

Applications

  • Switching applications requiring high power density and efficiency
  • Industrial power supplies and converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-voltage DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STD2N105K5?

    The maximum drain-source voltage (VDS) is 1050 V.

  2. What is the typical on-resistance of the STD2N105K5?

    The typical on-resistance (RDS(on)) is 6 Ω.

  3. What is the continuous drain current at 25 °C for the STD2N105K5?

    The continuous drain current (ID) at 25 °C is 1.5 A.

  4. What is the thermal resistance from junction to case for the STD2N105K5?

    The thermal resistance from junction to case (RthJC) is 2.08 °C/W.

  5. Is the STD2N105K5 100% avalanche tested?

    Yes, the STD2N105K5 is 100% avalanche tested.

  6. What package type is the STD2N105K5 available in?

    The STD2N105K5 is available in a DPAK (TO-252) package.

  7. What technology is used in the STD2N105K5?

    The STD2N105K5 uses MDmesh K5 technology.

  8. What are some typical applications for the STD2N105K5?

    Typical applications include switching applications, industrial power supplies, motor control, and high-voltage DC-DC converters.

  9. Is the STD2N105K5 ECOPACK compliant?

    Yes, the STD2N105K5 is ECOPACK compliant.

  10. What is the maximum gate-source voltage for the STD2N105K5?

    The maximum gate-source voltage (VGS) is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:115 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$2.25
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