STD25NF10T4
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STMicroelectronics STD25NF10T4

Manufacturer No:
STD25NF10T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 25A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD25NF10T4 is a medium-voltage N-channel power MOSFET produced by STMicroelectronics. This device is part of STMicroelectronics' STripFET process portfolio, designed to minimize input capacitance and gate charge, making it highly efficient for various applications. The STD25NF10T4 is packaged in a DPAK (TO-252) package and is RoHS compliant.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 25 A
PD (Power Dissipation) 100 W
RDS(on) (On-State Resistance) 38 mΩ @ 10V, 12.5A
VGS(th) (Threshold Voltage) 3 V @ 250 μA V
Package DPAK (TO-252) -

Key Features

  • Low input capacitance and gate charge due to STripFET process technology, enhancing switching efficiency.
  • High current capability with a continuous drain current of 25A.
  • High power dissipation of 100W, suitable for demanding applications.
  • Low on-state resistance (RDS(on)) of 38 mΩ @ 10V, 12.5A, reducing energy losses.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
  • Industrial and automotive applications requiring high efficiency and low gate charge driving.
  • Other applications with low gate charge driving requirements, such as power supplies and motor control systems.

Q & A

  1. What is the drain-source voltage (VDS) of the STD25NF10T4?

    The drain-source voltage (VDS) of the STD25NF10T4 is 100V.

  2. What is the continuous drain current (ID) of the STD25NF10T4?

    The continuous drain current (ID) of the STD25NF10T4 is 25A.

  3. What is the power dissipation (PD) of the STD25NF10T4?

    The power dissipation (PD) of the STD25NF10T4 is 100W.

  4. What is the on-state resistance (RDS(on)) of the STD25NF10T4?

    The on-state resistance (RDS(on)) of the STD25NF10T4 is 38 mΩ @ 10V, 12.5A.

  5. What package type is the STD25NF10T4 available in?

    The STD25NF10T4 is available in a DPAK (TO-252) package.

  6. Is the STD25NF10T4 RoHS compliant?

    Yes, the STD25NF10T4 is RoHS compliant.

  7. What are some typical applications of the STD25NF10T4?

    The STD25NF10T4 is typically used in advanced high-efficiency isolated DC-DC converters, industrial and automotive applications, and other applications with low gate charge driving requirements.

  8. What technology is used in the STD25NF10T4 to minimize input capacitance and gate charge?

    The STD25NF10T4 uses STMicroelectronics' unique STripFET process technology to minimize input capacitance and gate charge.

  9. What is the threshold voltage (VGS(th)) of the STD25NF10T4?

    The threshold voltage (VGS(th)) of the STD25NF10T4 is 3 V @ 250 μA.

  10. Where can I purchase the STD25NF10T4?

    The STD25NF10T4 can be purchased from various distributors such as Future Electronics, Transfer Multisort Elektronik, and directly from the STMicroelectronics online store.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:38mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD25NF10T4 STD15NF10T4 STD20NF10T4 STD25NF10LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 23A (Tc) 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 12.5A, 10V 65mOhm @ 12A, 10V 45mOhm @ 15A, 10V 35mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 40 nC @ 10 V 55 nC @ 10 V 52 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 25 V 870 pF @ 25 V 1200 pF @ 25 V 1710 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 100W (Tc) 70W (Tc) 85W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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