STD10PF06-1
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STMicroelectronics STD10PF06-1

Manufacturer No:
STD10PF06-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET P-CH 60V 10A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10PF06-1 is a P-channel power MOSFET developed by STMicroelectronics using their advanced STripFET II technology. This device is characterized by its high packing density, low on-resistance, and rugged avalanche characteristics. It is available in both through-hole IPAK (TO-251) and surface-mounting DPAK (TO-252) packages, making it versatile for various applications. The STD10PF06-1 is designed to offer exceptional performance in terms of switching speed, low gate charge, and high reliability.

Key Specifications

Parameter Value Unit
VDS (Drain-source Voltage) 60 V
VDGR (Drain-gate Voltage) 60 V
VGS (Gate-source Voltage) ±20 V
ID (Drain Current, continuous at TC = 25°C) 10 A
ID (Drain Current, continuous at TC = 100°C) 7 A
IDM (Drain Current, pulsed) 40 A
Ptot (Total Dissipation at TC = 25°C) 40 W
Tj (Max. Operating Junction Temperature) 175 °C
RDS(on) (Static Drain-source On Resistance) 0.18 Ω (typ), 0.20 Ω (max) Ω
dv/dt (Peak Diode Recovery voltage slope) 6 V/ns
Tstg (Storage Temperature) -65 to 175 °C

Key Features

  • Low on-resistance (RDS(on) = 0.18 Ω typical)
  • High drain current (ID = 10 A continuous at TC = 25°C)
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • Rugged avalanche characteristics
  • Available in IPAK (TO-251) and DPAK (TO-252) packages

Applications

  • Motor control
  • DC-DC and DC-AC converters

Q & A

  1. What is the maximum drain-source voltage of the STD10PF06-1?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What are the package options for the STD10PF06-1?

    The device is available in through-hole IPAK (TO-251) and surface-mounting DPAK (TO-252) packages.

  3. What is the typical on-resistance of the STD10PF06-1?

    The typical on-resistance (RDS(on)) is 0.18 Ω.

  4. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 10 A.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature (Tj) is 175°C.

  6. What are the typical applications of the STD10PF06-1?

    The device is typically used in motor control and DC-DC and DC-AC converters.

  7. What is the storage temperature range for the STD10PF06-1?

    The storage temperature range (Tstg) is -65 to 175°C.

  8. Does the STD10PF06-1 have avalanche ruggedness?
  9. What is the peak diode recovery voltage slope (dv/dt)?

    The peak diode recovery voltage slope (dv/dt) is 6 V/ns.

  10. Is the STD10PF06-1 suitable for high-frequency switching applications?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
STD10PF06-1
STD10PF06-1
MOSFET P-CH 60V 10A IPAK

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