Overview
The STD10P10F6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device features a new trench gate structure, which significantly enhances its performance. The STD10P10F6 is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power applications. It is known for its very low on-resistance, low gate charge, and high avalanche ruggedness, which contribute to its efficiency and reliability in power management systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | -100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (continuous) at TC = 25 °C (ID) | -10 | A |
| Drain current (continuous) at TC = 100 °C (ID) | -7.5 | A |
| Drain current (pulsed) (IDM) | -40 | A |
| Total power dissipation at TC=25 °C (PTOT) | 40 | W |
| Storage temperature range (Tstg) | -55 to 175 | °C |
| Operating junction temperature range (TJ) | -55 to 175 | °C |
| Thermal resistance, junction-to-case (RthJC) | 3.75 | °C/W |
| Thermal resistance, junction-to-board (RthJB) | 50 | °C/W |
| On-resistance (RDS(on)) | 0.18 | Ω |
| Gate-source charge (Qgs) | 3.5 | nC |
| Gate-drain charge (Qgd) | 3.8 | nC |
Key Features
- Very low on-resistance (RDS(on)): Typically 0.18 Ω, ensuring minimal power loss during operation.
- Low gate charge: Reduces the power required for gate drive, enhancing efficiency.
- High avalanche ruggedness: Provides robustness against voltage spikes and transient conditions.
- Low gate drive power loss: Minimizes energy consumption and heat generation.
- Advanced STripFET F6 technology: Features a new trench gate structure for improved performance.
Applications
The STD10P10F6 is suitable for various high-power switching applications, including:
- Power management systems
- DC-DC converters
- Motor control systems
- Industrial power supplies
- Automotive systems (where applicable)
Q & A
- What is the maximum drain-source voltage (VDS) of the STD10P10F6?
The maximum drain-source voltage (VDS) is -100 V.
- What is the typical on-resistance (RDS(on)) of the STD10P10F6?
The typical on-resistance (RDS(on)) is 0.18 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is -10 A.
- What is the thermal resistance, junction-to-case (RthJC) of the STD10P10F6?
The thermal resistance, junction-to-case (RthJC), is 3.75 °C/W.
- What are the key features of the STD10P10F6?
The key features include very low on-resistance, low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what package is the STD10P10F6 available?
The STD10P10F6 is available in a DPAK (TO-252) package.
- What is the maximum gate-source voltage (VGS) for the STD10P10F6?
The maximum gate-source voltage (VGS) is ±20 V.
- What are some typical applications of the STD10P10F6?
Typical applications include power management systems, DC-DC converters, motor control systems, and industrial power supplies.
- What technology is used in the STD10P10F6?
The STD10P10F6 uses the advanced STripFET F6 technology with a new trench gate structure.
- What is the maximum total power dissipation (PTOT) at 25 °C?
The maximum total power dissipation (PTOT) at 25 °C is 40 W.
