Overview
The STB160N75F3 is an N-channel enhancement mode Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ family, known for its ultra-low on-resistance, high packing density, and rugged avalanche characteristics. This MOSFET is designed to meet the demands of high-performance switching applications, offering excellent electrical and thermal properties. The device is available in TO-220, TO-247, and D²PAK packages, making it versatile for various design requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 75 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 120 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 3.5 mΩ (D²PAK), 3.2 mΩ (TO-220), 4.2 mΩ (TO-247) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.48 | °C/W |
| Maximum Lead Temperature for Soldering | 300 | °C |
Key Features
- Ultra Low On-Resistance: The STB160N75F3 features an extremely low on-resistance, making it highly efficient for switching applications.
- High Packing Density: The device boasts a high packing density due to STMicroelectronics' STripFET™ process, enhancing its performance and reliability.
- Rugged Avalanche Characteristics: The MOSFET is 100% avalanche tested, ensuring robustness and reliability under various operating conditions.
- Low Gate Charge: It has a low gate charge, which is beneficial for high-frequency switching applications.
- ECOPACK® Packages: Available in lead-free ECOPACK® packages, which comply with environmental regulations and JEDEC standards.
Applications
The STB160N75F3 is primarily used in high-performance switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- High-frequency switching circuits
- Aerospace and automotive systems requiring high reliability and efficiency
Q & A
- What is the maximum drain-source voltage (VDS) of the STB160N75F3?
The maximum drain-source voltage (VDS) is 75V.
- What are the available package types for the STB160N75F3?
The device is available in TO-220, TO-247, and D²PAK packages.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 120A.
- What is the typical static drain-source on-resistance (RDS(on)) for the D²PAK package?
The typical static drain-source on-resistance (RDS(on)) for the D²PAK package is 3.5 mΩ.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2 to 4 V.
- Is the STB160N75F3 100% avalanche tested?
Yes, the STB160N75F3 is 100% avalanche tested.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300°C.
- Are the packages lead-free and compliant with environmental regulations?
Yes, the packages are lead-free and comply with environmental regulations, marked as ECOPACK®.
- What are some common applications of the STB160N75F3?
Common applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
- What is the thermal resistance junction-case (Rthj-case) for the STB160N75F3?
The thermal resistance junction-case (Rthj-case) is 0.48 °C/W.
