STB160N75F3
  • Share:

STMicroelectronics STB160N75F3

Manufacturer No:
STB160N75F3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB160N75F3 is an N-channel enhancement mode Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ family, known for its ultra-low on-resistance, high packing density, and rugged avalanche characteristics. This MOSFET is designed to meet the demands of high-performance switching applications, offering excellent electrical and thermal properties. The device is available in TO-220, TO-247, and D²PAK packages, making it versatile for various design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 75 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 120 A
Pulsed Drain Current (IDM) 480 A
Static Drain-Source On-Resistance (RDS(on)) 3.5 mΩ (D²PAK), 3.2 mΩ (TO-220), 4.2 mΩ (TO-247) mΩ
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Thermal Resistance Junction-Case (Rthj-case) 0.48 °C/W
Maximum Lead Temperature for Soldering 300 °C

Key Features

  • Ultra Low On-Resistance: The STB160N75F3 features an extremely low on-resistance, making it highly efficient for switching applications.
  • High Packing Density: The device boasts a high packing density due to STMicroelectronics' STripFET™ process, enhancing its performance and reliability.
  • Rugged Avalanche Characteristics: The MOSFET is 100% avalanche tested, ensuring robustness and reliability under various operating conditions.
  • Low Gate Charge: It has a low gate charge, which is beneficial for high-frequency switching applications.
  • ECOPACK® Packages: Available in lead-free ECOPACK® packages, which comply with environmental regulations and JEDEC standards.

Applications

The STB160N75F3 is primarily used in high-performance switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Aerospace and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB160N75F3?

    The maximum drain-source voltage (VDS) is 75V.

  2. What are the available package types for the STB160N75F3?

    The device is available in TO-220, TO-247, and D²PAK packages.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 120A.

  4. What is the typical static drain-source on-resistance (RDS(on)) for the D²PAK package?

    The typical static drain-source on-resistance (RDS(on)) for the D²PAK package is 3.5 mΩ.

  5. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  6. Is the STB160N75F3 100% avalanche tested?

    Yes, the STB160N75F3 is 100% avalanche tested.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

  8. Are the packages lead-free and compliant with environmental regulations?

    Yes, the packages are lead-free and comply with environmental regulations, marked as ECOPACK®.

  9. What are some common applications of the STB160N75F3?

    Common applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  10. What is the thermal resistance junction-case (Rthj-case) for the STB160N75F3?

    The thermal resistance junction-case (Rthj-case) is 0.48 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$6.80
134

Please send RFQ , we will respond immediately.

Same Series
STP160N75F3
STP160N75F3
MOSFET N-CH 75V 120A TO220AB
STW160N75F3
STW160N75F3
MOSFET N-CH 75V 120A TO247-3

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT