Overview
The STB140NF75T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the StripFET™ III family, which utilizes STMicroelectronics' unique 'Single Feature Size™' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, robust avalanche characteristics, and improved manufacturing reproducibility.
The STB140NF75T4 is available in D2PAK, I2PAK, and TO-220 packages, making it versatile for various applications. It is designed for high-power switching applications, offering excellent electrical and thermal performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 75 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 120 | A |
| Continuous Drain Current (ID) at TC = 100°C | 100 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Total Dissipation at TC = 25°C | 310 | W |
| Derating Factor | 2.08 | W/°C |
| Static Drain-Source On Resistance (RDS(on)) | < 0.0075 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.48 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- High Packing Density: The 'Single Feature Size™' strip-based process ensures low on-resistance and high current handling capabilities.
- Rugged Avalanche Characteristics: The device is 100% avalanche tested, providing robust performance under high-stress conditions.
- Low On-Resistance: With a static drain-source on resistance (RDS(on)) of less than 0.0075 Ω, this MOSFET minimizes energy losses during operation.
- High Current Capability: Supports continuous drain currents up to 120 A at 25°C and pulsed currents up to 480 A.
- ECOPACK® Packages: Available in lead-free packages that meet environmental standards, marked with JEDEC Standard JESD97 compliance.
- High Thermal Performance: Features low thermal resistance and high total dissipation capacity, ensuring reliable operation in demanding environments.
Applications
- Switching Applications: Ideal for high-power switching in various industries, including power supplies, motor control, and automotive systems.
- Power Management Systems: Suitable for use in DC-DC converters, battery management systems, and other power management applications.
- Industrial and Automotive Systems: Can be used in industrial control systems, automotive electronics, and other high-reliability applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB140NF75T4?
The maximum drain-source voltage (VDS) is 75 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 120 A.
- What is the static drain-source on resistance (RDS(on)) of the STB140NF75T4?
The static drain-source on resistance (RDS(on)) is less than 0.0075 Ω.
- What are the package options available for the STB140NF75T4?
The device is available in D2PAK, I2PAK, and TO-220 packages.
- What is the maximum operating junction temperature (Tj) of the STB140NF75T4?
The maximum operating junction temperature (Tj) is 175 °C.
- What is the thermal resistance junction-case (Rthj-case) of the STB140NF75T4?
The thermal resistance junction-case (Rthj-case) is 0.48 °C/W.
- Is the STB140NF75T4 100% avalanche tested?
Yes, the STB140NF75T4 is 100% avalanche tested.
- What is the gate threshold voltage (VGS(th)) range of the STB140NF75T4?
The gate threshold voltage (VGS(th)) range is 2 - 4 V.
- What is the total dissipation at 25°C for the STB140NF75T4?
The total dissipation at 25°C is 310 W.
- Are the packages of the STB140NF75T4 lead-free and environmentally compliant?
Yes, the packages are lead-free and comply with JEDEC Standard JESD97.
