STB10LN80K5
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STMicroelectronics STB10LN80K5

Manufacturer No:
STB10LN80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 800V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB10LN80K5 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh K5 series. This device is designed to offer excellent electrical characteristics and robustness, making it suitable for a variety of high-power applications. The STB10LN80K5 is housed in a D2PAK package, which provides good thermal dissipation and is RoHS compliant and Ecopack2 certified, ensuring environmental sustainability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
RDS(on) (On-State Resistance)0.55 Ω (typ.)
ID (Continuous Drain Current)8 A
PD (Power Dissipation)110 W
TJ (Junction Temperature)150°C
PackageD2PAK
ComplianceRoHS compliant, Ecopack2

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.55 Ω, reducing power losses.
  • Continuous drain current of 8 A, supporting high current requirements.
  • High power dissipation capability of 110 W.
  • Robust and reliable performance with a junction temperature up to 150°C.
  • Environmentally friendly with RoHS compliance and Ecopack2 certification.

Applications

The STB10LN80K5 is versatile and can be used in various high-power applications, including:

  • Switch-mode power supplies (SMPS).
  • Motor control and drives.
  • Power factor correction (PFC) circuits.
  • High-frequency switching applications.
  • Industrial and automotive systems requiring high reliability and performance.

Q & A

  1. What is the drain-source voltage rating of the STB10LN80K5?
    The drain-source voltage rating is 800 V.
  2. What is the typical on-state resistance of the STB10LN80K5?
    The typical on-state resistance is 0.55 Ω.
  3. What is the continuous drain current of the STB10LN80K5?
    The continuous drain current is 8 A.
  4. What is the maximum junction temperature of the STB10LN80K5?
    The maximum junction temperature is 150°C.
  5. In what package is the STB10LN80K5 available?
    The STB10LN80K5 is available in a D2PAK package.
  6. Is the STB10LN80K5 RoHS compliant?
    Yes, the STB10LN80K5 is RoHS compliant and Ecopack2 certified.
  7. What are some common applications for the STB10LN80K5?
    Common applications include switch-mode power supplies, motor control, power factor correction circuits, and high-frequency switching applications.
  8. What is the power dissipation capability of the STB10LN80K5?
    The power dissipation capability is 110 W.
  9. Is the STB10LN80K5 suitable for automotive applications?
    While this specific model is not automotive-grade, there are other models in the MDmesh K5 series that are automotive-grade.
  10. Where can I find detailed specifications and datasheets for the STB10LN80K5?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Newark Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:630mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:427 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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