BUL1203EFP
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STMicroelectronics BUL1203EFP

Manufacturer No:
BUL1203EFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 550V 5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUL1203EFP is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. It is designed using Diffused Collector technology, which enhances switching speeds and maintains a tight hFE range, ensuring reliable operation. This transistor is known for its high voltage capability, very high switching speed, and intrinsic ruggedness, allowing it to withstand high collector current levels during breakdown conditions without the need for additional protection like Transil™.

Key Specifications

ParameterValueUnit
VCBO (Collector-Base Voltage)1200V
VCES (Collector-Emitter Voltage)1200V
VCEO (Collector-Emitter Voltage)550V
VEBO (Emitter-Base Voltage)9V
IC (Collector Current)5A
ICM (Collector Peak Current)8A
IB (Base Current)2A
IBM (Base Peak Current)4A
Ptot (Total Dissipation at Tc = 25°C)36W
Visol (Insulation Withstand Voltage)1500V
Tstg (Storage Temperature)-65 to 150°C
Tj (Max. Operating Junction Temperature)150°C
Rthj-case (Thermal Resistance Junction-case)3.47°C/W
Rthj-amb (Thermal Resistance Junction-ambient)62.5°C/W

Key Features

  • High voltage capability up to 1200 V
  • Very high switching speed
  • Low spread of dynamic parameters and minimum lot-to-lot spread for reliable operation
  • Intrinsic ruggedness to withstand high collector current levels during breakdown conditions
  • Fully insulated package (U.L. compliant) for easy mounting applications
  • High collector current and base current handling capabilities

Applications

The BUL1203EFP is primarily used in electronic ballasts for fluorescent lighting, including 277 V half bridge and 120 V push-pull topologies. Its high voltage and fast-switching capabilities make it suitable for various power switching and control applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BUL1203EFP?
    The maximum collector-emitter voltage (VCEO) is 550 V.
  2. What is the maximum collector current of the BUL1203EFP?
    The maximum collector current (IC) is 5 A.
  3. What is the thermal resistance junction-case of the BUL1203EFP?
    The thermal resistance junction-case (Rthj-case) is 3.47 °C/W.
  4. What is the maximum operating junction temperature of the BUL1203EFP?
    The maximum operating junction temperature (Tj) is 150 °C.
  5. What type of package does the BUL1203EFP come in?
    The BUL1203EFP comes in a fully insulated TO-220FP package.
  6. What are the primary applications of the BUL1203EFP?
    The primary applications include electronic ballasts for fluorescent lighting, such as 277 V half bridge and 120 V push-pull topologies.
  7. Does the BUL1203EFP require additional protection like Transil™?
    No, the BUL1203EFP does not require additional protection like Transil™ due to its intrinsic ruggedness.
  8. What is the storage temperature range for the BUL1203EFP?
    The storage temperature range is -65 to 150 °C.
  9. What is the total dissipation at Tc = 25°C for the BUL1203EFP?
    The total dissipation at Tc = 25°C is 36 W.
  10. What is the insulation withstand voltage of the BUL1203EFP?
    The insulation withstand voltage (Visol) is 1500 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):550 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 1A, 3A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:9 @ 2A, 5V
Power - Max:36 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220-3
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