BSS138BKWT106
  • Share:

Rohm Semiconductor BSS138BKWT106

Manufacturer No:
BSS138BKWT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
NCH 60V 380MA, SOT-323, SMALL SI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKWT106, produced by Rohm Semiconductor, is a single N-channel MOSFET designed for various low-power and high-speed switching applications. This MOSFET is part of the BSS138 series and is packaged in the UMT3 (SOT-323) package, which includes an ESD protection diode. It is ideal for use in switching circuits, low-side load switches, and relay driver applications due to its fast switching capabilities and low on-state resistance.

Key Specifications

Parameter Value
Package Code UMT3 (SOT-323)
JEITA Package SC-70
Number of Terminals 3
Polarity N-channel
Drain-Source Voltage (VDSS) 60 V
Drain Current (ID) 0.31 A
RDS(on) at VGS = 2.5 V (Typ.) 3 Ω
RDS(on) at VGS = 4.5 V (Typ.) 2.1 Ω
RDS(on) at VGS = 10 V (Typ.) 1.7 Ω
Power Dissipation (PD) 0.3 W
Drive Voltage 2.5 V
Mounting Style Surface mount
Storage Temperature (Min.) -55°C
Storage Temperature (Max.) 150°C
Package Size 2.0 x 2.1 mm (t = 1.1 mm)

Key Features

  • Very fast switching capabilities
  • Ultra-low voltage drive (2.5 V drive)
  • ESD protection up to 2 kV (HBM)
  • Pb-free lead plating; RoHS compliant
  • Halogen-free

Applications

  • Switching circuits
  • Low-side load switches
  • Relay driver applications
  • Logic level shifters
  • DC-DC converters
  • Power management applications
  • eMobility applications

Q & A

  1. What is the package type of the BSS138BKWT106 MOSFET?

    The BSS138BKWT106 is packaged in the UMT3 (SOT-323) package.

  2. What is the maximum drain-source voltage (VDSS) of the BSS138BKWT106?

    The maximum drain-source voltage is 60 V.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 2.5 V?

    The typical on-state resistance at VGS = 2.5 V is 3 Ω.

  4. Does the BSS138BKWT106 have ESD protection?
  5. What are the storage temperature ranges for the BSS138BKWT106?

    The storage temperature ranges are from -55°C to 150°C.

  6. Is the BSS138BKWT106 RoHS compliant?
  7. What are some common applications for the BSS138BKWT106?
  8. What is the maximum drain current (ID) for the BSS138BKWT106?

    The maximum drain current is 0.31 A.

  9. Is the BSS138BKWT106 suitable for automotive applications?
  10. What is the drive voltage for the BSS138BKWT106?

    The drive voltage is 2.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:680mOhm @ 380mA, 10V
Vgs(th) (Max) @ Id:2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:47 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.51
1,094

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
BAS16HMT116
BAS16HMT116
Rohm Semiconductor
BAS16HM IS HIGH RELIABILITY AND
RB751S-409HHTE61
RB751S-409HHTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84C3V6LYFHT116
BZX84C3V6LYFHT116
Rohm Semiconductor
250MW, 3.6V, SOT-23, AUTOMOTIVE
BZX84B24VLYFHT116
BZX84B24VLYFHT116
Rohm Semiconductor
250MW, 24V, SOT-23, AUTOMOTIVE Z
BZX84B12VLFHT116
BZX84B12VLFHT116
Rohm Semiconductor
DIODE ZENER 12V 250MW SSD3
BZX84C5V1LYFHT116
BZX84C5V1LYFHT116
Rohm Semiconductor
250MW, 5.1V, SOT-23, AUTOMOTIVE
BZX84C5V6LYFHT116
BZX84C5V6LYFHT116
Rohm Semiconductor
250MW, 5.6V, SOT-23, AUTOMOTIVE
BZX84C4V7LFHT116
BZX84C4V7LFHT116
Rohm Semiconductor
DIODE ZENER 4.7V 250MW SSD3
BZX84B30VLFHT116
BZX84B30VLFHT116
Rohm Semiconductor
DIODE ZENER 30V 250MW SSD3
BZX84C10VLFHT116
BZX84C10VLFHT116
Rohm Semiconductor
DIODE ZENER 10V 250MW SSD3
LM393FVM-TR
LM393FVM-TR
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM393F