BSS138BKWT106
  • Share:

Rohm Semiconductor BSS138BKWT106

Manufacturer No:
BSS138BKWT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
NCH 60V 380MA, SOT-323, SMALL SI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKWT106, produced by Rohm Semiconductor, is a single N-channel MOSFET designed for various low-power and high-speed switching applications. This MOSFET is part of the BSS138 series and is packaged in the UMT3 (SOT-323) package, which includes an ESD protection diode. It is ideal for use in switching circuits, low-side load switches, and relay driver applications due to its fast switching capabilities and low on-state resistance.

Key Specifications

Parameter Value
Package Code UMT3 (SOT-323)
JEITA Package SC-70
Number of Terminals 3
Polarity N-channel
Drain-Source Voltage (VDSS) 60 V
Drain Current (ID) 0.31 A
RDS(on) at VGS = 2.5 V (Typ.) 3 Ω
RDS(on) at VGS = 4.5 V (Typ.) 2.1 Ω
RDS(on) at VGS = 10 V (Typ.) 1.7 Ω
Power Dissipation (PD) 0.3 W
Drive Voltage 2.5 V
Mounting Style Surface mount
Storage Temperature (Min.) -55°C
Storage Temperature (Max.) 150°C
Package Size 2.0 x 2.1 mm (t = 1.1 mm)

Key Features

  • Very fast switching capabilities
  • Ultra-low voltage drive (2.5 V drive)
  • ESD protection up to 2 kV (HBM)
  • Pb-free lead plating; RoHS compliant
  • Halogen-free

Applications

  • Switching circuits
  • Low-side load switches
  • Relay driver applications
  • Logic level shifters
  • DC-DC converters
  • Power management applications
  • eMobility applications

Q & A

  1. What is the package type of the BSS138BKWT106 MOSFET?

    The BSS138BKWT106 is packaged in the UMT3 (SOT-323) package.

  2. What is the maximum drain-source voltage (VDSS) of the BSS138BKWT106?

    The maximum drain-source voltage is 60 V.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 2.5 V?

    The typical on-state resistance at VGS = 2.5 V is 3 Ω.

  4. Does the BSS138BKWT106 have ESD protection?
  5. What are the storage temperature ranges for the BSS138BKWT106?

    The storage temperature ranges are from -55°C to 150°C.

  6. Is the BSS138BKWT106 RoHS compliant?
  7. What are some common applications for the BSS138BKWT106?
  8. What is the maximum drain current (ID) for the BSS138BKWT106?

    The maximum drain current is 0.31 A.

  9. Is the BSS138BKWT106 suitable for automotive applications?
  10. What is the drive voltage for the BSS138BKWT106?

    The drive voltage is 2.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:680mOhm @ 380mA, 10V
Vgs(th) (Max) @ Id:2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:47 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.51
1,094

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223

Related Product By Brand

BAT54AHYT116
BAT54AHYT116
Rohm Semiconductor
30V, 200MA, SOT-23, ANODE COMMON
BAT54AHMT116
BAT54AHMT116
Rohm Semiconductor
BAT54AHM IS SCHOTTKY BARRIER DIO
RB751V-40TE-17
RB751V-40TE-17
Rohm Semiconductor
DIODE SCHOTTKY 30V 30MA UMD2
BZX84B7V5LYT116
BZX84B7V5LYT116
Rohm Semiconductor
250MW, 7.5V, SOT-23, ZENER DIODE
BZX84C8V2LYFHT116
BZX84C8V2LYFHT116
Rohm Semiconductor
250MW, 3.6V, SOT-23, AUTOMOTIVE
BZX84C9V1LFHT116
BZX84C9V1LFHT116
Rohm Semiconductor
DIODE ZENER 9.05V 250MW SSD3
BZX84C3V9LT116
BZX84C3V9LT116
Rohm Semiconductor
DIODE ZENER 3.9V 250MW SSD3
BZX84B13VLFHT116
BZX84B13VLFHT116
Rohm Semiconductor
DIODE ZENER 13V 250MW SSD3
BZX84B5V6LYFHT116
BZX84B5V6LYFHT116
Rohm Semiconductor
250MW, 5.6V, SOT-23, AUTOMOTIVE
BZX84B6V8LFHT116
BZX84B6V8LFHT116
Rohm Semiconductor
DIODE ZENER 6.8V 250MW SSD3
BC857BU3T106
BC857BU3T106
Rohm Semiconductor
TRANS PNP 45V 0.1A UMT3
LM393F-E2
LM393F-E2
Rohm Semiconductor
IC COMP 2CH GRND SENSE SOP8