PCP1302-TD-H
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onsemi PCP1302-TD-H

Manufacturer No:
PCP1302-TD-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 3A SOT89/PCP-1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PCP1302-TD-H is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by onsemi. This component is designed for various power management and switching applications. Although it is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current3 A
Power Dissipation (Max)3.5 W (Tc)
Rds On (Max) @ Id, Vgs266 mOhm @ 1.5 A, 10 V
Operating Temperature150°C (TJ)

Key Features

  • Logic Level Gate Drive: The PCP1302-TD-H features a logic level gate drive, making it compatible with low-voltage control signals, typically 4V or higher.
  • High Current Capability: It can handle a continuous drain current of 3 A, making it suitable for applications requiring moderate to high current levels.
  • Low On-Resistance: The MOSFET has a low on-resistance (Rds On) of 266 mOhm at 1.5 A and 10 V, which minimizes power losses during operation.
  • High Operating Temperature: The component can operate up to a junction temperature of 150°C, enhancing its reliability in high-temperature environments.

Applications

The PCP1302-TD-H is suitable for a variety of applications, including:

  • Power Management: It can be used in power supply circuits, voltage regulators, and other power management systems.
  • Switching Circuits: Its high current capability and low on-resistance make it ideal for switching applications such as motor control, lighting control, and other high-current switching needs.
  • Automotive Systems: The high operating temperature and robust specifications make it a candidate for use in automotive electronics.

Q & A

  1. What is the transistor polarity of the PCP1302-TD-H?
    The transistor polarity of the PCP1302-TD-H is P-Channel.
  2. What is the maximum drain-source breakdown voltage of the PCP1302-TD-H?
    The maximum drain-source breakdown voltage is 60 V.
  3. What is the continuous drain current rating of the PCP1302-TD-H?
    The continuous drain current rating is 3 A.
  4. What is the maximum power dissipation of the PCP1302-TD-H?
    The maximum power dissipation is 3.5 W (Tc).
  5. What is the on-resistance (Rds On) of the PCP1302-TD-H?
    The on-resistance (Rds On) is 266 mOhm at 1.5 A and 10 V.
  6. What is the operating temperature range of the PCP1302-TD-H?
    The operating temperature range is up to 150°C (TJ).
  7. Is the PCP1302-TD-H still in production?
    No, the PCP1302-TD-H is currently listed as obsolete and no longer manufactured.
  8. What type of gate drive does the PCP1302-TD-H feature?
    The PCP1302-TD-H features a logic level gate drive.
  9. What are some common applications for the PCP1302-TD-H?
    Common applications include power management, switching circuits, and automotive systems.
  10. Where can I find substitutes for the PCP1302-TD-H?
    Substitutes can be found through distributors like Digi-Key, which lists similar products.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:266mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-89/PCP-1
Package / Case:TO-243AA
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Similar Products

Part Number PCP1302-TD-H PCP1402-TD-H
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 250 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 10V
Rds On (Max) @ Id, Vgs 266mOhm @ 1.5A, 10V 2.4Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V 4.2 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 20 V 210 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.5W (Tc) 3.5W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-89/PCP-1 SOT-89/PCP-2
Package / Case TO-243AA TO-243AA

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