NVTFS9D6P04M8LTAG
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onsemi NVTFS9D6P04M8LTAG

Manufacturer No:
NVTFS9D6P04M8LTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 13A/64A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS9D6P04M8LTAG is a high-performance, single P-Channel power MOSFET produced by onsemi. This device is designed to offer superior electrical characteristics and reliability, making it suitable for a wide range of power management applications. The MOSFET features a WDFN8 3.3x3.3 package and is RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)40 V
Current Rating (Id)64 A
Maximum Operating Temperature+175°C
Minimum Operating Temperature-55°C
Power Dissipation (Pd)75 W
Package TypeWDFN8 3.3x3.3
RoHS ComplianceYes

Key Features

  • High current capability of up to 64 A
  • Low on-resistance (Rds(on)) for efficient power handling
  • Wide operating temperature range from -55°C to +175°C
  • RoHS compliant, ensuring environmental sustainability
  • Compact WDFN8 3.3x3.3 package for space-efficient designs

Applications

The NVTFS9D6P04M8LTAG MOSFET is versatile and can be used in various power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems requiring high reliability and temperature tolerance
  • Industrial power management and control systems

Q & A

  1. What is the voltage rating of the NVTFS9D6P04M8LTAG MOSFET?
    The voltage rating (Vds) of the NVTFS9D6P04M8LTAG MOSFET is 40 V.
  2. What is the maximum current rating of this MOSFET?
    The maximum current rating (Id) of the NVTFS9D6P04M8LTAG MOSFET is 64 A.
  3. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to +175°C.
  4. Is the NVTFS9D6P04M8LTAG MOSFET RoHS compliant?
    Yes, the NVTFS9D6P04M8LTAG MOSFET is RoHS compliant.
  5. What is the package type of this MOSFET?
    The package type is WDFN8 3.3x3.3.
  6. What is the power dissipation (Pd) of this MOSFET?
    The power dissipation (Pd) is 75 W.
  7. In which applications can the NVTFS9D6P04M8LTAG MOSFET be used?
    This MOSFET can be used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management systems.
  8. Why is the WDFN8 package beneficial?
    The WDFN8 3.3x3.3 package is beneficial due to its compact size, which allows for space-efficient designs.
  9. Where can I find detailed specifications for the NVTFS9D6P04M8LTAG MOSFET?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Newark, and Farnell.
  10. Is this MOSFET suitable for high-temperature environments?
    Yes, the NVTFS9D6P04M8LTAG MOSFET is suitable for high-temperature environments with a maximum operating temperature of +175°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 580µA
Gate Charge (Qg) (Max) @ Vgs:34.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2312 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS9D6P04M8LTAG NVTFWS9D6P04M8LTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 64A (Tc) 13A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V 9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 580µA 2.4V @ 580µA
Gate Charge (Qg) (Max) @ Vgs 34.6 nC @ 10 V 34.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2312 pF @ 20 V 2312 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 75W (Tc) 3.2W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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