NVTFS5C673NLTAG
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onsemi NVTFS5C673NLTAG

Manufacturer No:
NVTFS5C673NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 13A/50A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5C673NLTAG is a power field-effect transistor (FET) designed by onsemi. This single N-channel MOSFET is optimized for high-performance applications, offering a combination of low on-resistance, fast switching times, and a compact design. It is particularly suited for use in power management systems, motor control, and other high-current applications where efficiency and reliability are critical.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TC = 25°C)ID50A
Gate Threshold VoltageVGS(TH)1.2 - 2.0V
Drain-to-Source On Resistance (VGS = 10 V, ID = 25 A)RDS(on)8.1 - 9.8
Input CapacitanceCISS880pF
Total Gate Charge (VGS = 10 V, VDS = 48 V, ID = 25 A)QG(TOT)9.5nC
Turn-On Delay Time (VGS = 10 V, VDS = 48 V, ID = 25 A, RG = 2.5 Ω)td(ON)6.0ns

Key Features

  • Small Footprint: The device features a compact 3.3 x 3.3 mm WDFN8 package, ideal for space-constrained designs.
  • Low RDS(on): Minimizes conduction losses, enhancing overall system efficiency.
  • Low Capacitance: Reduces driver losses and improves switching performance.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory requirements.
  • Wettable Flanks Option: Available in versions with wettable flanks for improved solder joint inspection.

Applications

The NVTFS5C673NLTAG is suitable for a variety of high-performance applications, including:

  • Power management systems
  • Motor control and drive systems
  • Automotive systems (due to AEC-Q101 qualification)
  • High-current DC-DC converters
  • Switch-mode power supplies

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5C673NLTAG? The maximum drain-to-source voltage is 60 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current rating at 25°C is 50 A.
  3. What is the typical on-resistance of the NVTFS5C673NLTAG? The typical on-resistance is 8.1 - 9.8 mΩ at VGS = 10 V and ID = 25 A.
  4. Is the NVTFS5C673NLTAG RoHS compliant? Yes, the device is Pb-Free and RoHS compliant.
  5. What package type is the NVTFS5C673NLTAG available in? It is available in a WDFN8 package with dimensions of 3.3 x 3.3 mm.
  6. What is the gate threshold voltage range? The gate threshold voltage range is 1.2 - 2.0 V.
  7. What is the total gate charge at VGS = 10 V and VDS = 48 V? The total gate charge is 9.5 nC.
  8. What is the turn-on delay time? The turn-on delay time is 6.0 ns at VGS = 10 V, VDS = 48 V, ID = 25 A, and RG = 2.5 Ω.
  9. Is the NVTFS5C673NLTAG suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  10. What is the input capacitance of the device? The input capacitance is 880 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 46W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5C673NLTAG
NVTFS5C673NLTAG
MOSFET N-CH 60V 13A/50A 8WDFN

Similar Products

Part Number NVTFS5C673NLTAG NVTFS5C670NLTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 50A (Tc) 16A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 25A, 10V 6.8mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 46W (Tc) 3.2W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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