Overview
The NVMYS2D4N04CTWG is a high-performance, dual N-channel MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in various power management applications. With its compact LFPAK4 package, it is ideal for space-constrained designs while maintaining high current handling capabilities.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 30 | A |
| Continuous Drain Current (TC = 25°C) | ID | 138 | A |
| Power Dissipation (TA = 25°C) | PD | - | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | - | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) | RDS(on) | - | mΩ |
| Gate Threshold Voltage | VGS(TH) | 2.5 - 3.5 | V |
Key Features
- Small Footprint (5x6 mm) for compact design, making it suitable for space-constrained applications.
- Low RDS(on) to minimize conduction losses, enhancing overall efficiency.
- Low QG and Capacitance to minimize driver losses, improving switching performance.
- AEC-Q101 Qualified and PPAP Capable, ensuring high reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant, adhering to environmental regulations.
Applications
The NVMYS2D4N04CTWG is versatile and can be used in a variety of applications, including:
- Automotive systems, such as power steering, braking, and infotainment systems.
- Industrial power supplies and motor control systems.
- Consumer electronics, including power adapters and battery chargers.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-to-source voltage of the NVMYS2D4N04CTWG?
The maximum drain-to-source voltage (VDSS) is 40 V. - What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 30 A. - Is the NVMYS2D4N04CTWG AEC-Q101 qualified?
Yes, the NVMYS2D4N04CTWG is AEC-Q101 qualified and PPAP capable. - What is the typical on-resistance (RDS(on)) of the device?
The typical on-resistance (RDS(on)) is not specified in the provided sources, but it is designed to be low to minimize conduction losses. - What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C. - Is the device Pb-Free and RoHS compliant?
Yes, the NVMYS2D4N04CTWG is Pb-Free and RoHS compliant. - What is the package type of the NVMYS2D4N04CTWG?
The device is packaged in an LFPAK4 package. - What are some common applications of the NVMYS2D4N04CTWG?
Common applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems. - What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 2.5 to 3.5 V. - How does the device minimize driver losses?
The device minimizes driver losses through its low QG and capacitance.
