Overview
The NVMFS6H818NT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to meet the stringent requirements of automotive applications, complying with AEC-Q101 standards. It features a low on-state resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Breakdown Voltage (Vds) | 80 V |
| Drain Current (Id) | 87 A |
| Pulsed Drain Current (Idm) | 900 A |
| On-state Resistance (Rds(on)) | 3.7 mΩ @ 10 V |
| Gate-Source Voltage (Vgs) | ±20 V |
| Gate Charge (Qg) | 46 nC @ 10 V |
| Power Dissipation (Pd) | 68 W |
| Operating Temperature Range | -55°C to 175°C |
| Package Type | DFN5x6, SO-FL EP |
| Mounting Type | Surface Mount |
| Package Dimensions | 5.9 mm x 4.9 mm x 1.05 mm (Max) |
Key Features
- Low on-state resistance of 3.7 mΩ at 10 V, enhancing efficiency in power management applications.
- High current handling capability with a continuous drain current of 87 A and a pulsed drain current of 900 A.
- Wide operating temperature range from -55°C to 175°C, making it suitable for harsh automotive environments.
- AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
- Surface mount package (DFN5x6, SO-FL EP) for easy integration into modern PCB designs.
Applications
The NVMFS6H818NT1G is primarily designed for automotive applications, including but not limited to:
- Power management systems in vehicles.
- Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.
- Automotive DC-DC converters and power supplies.
- Motor control and drive systems.
- Other high-power switching applications requiring reliability and efficiency.
Q & A
- What is the drain-source breakdown voltage of the NVMFS6H818NT1G?
The drain-source breakdown voltage (Vds) is 80 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current (Id) is 87 A. - What is the on-state resistance of the NVMFS6H818NT1G?
The on-state resistance (Rds(on)) is 3.7 mΩ at 10 V. - What is the operating temperature range of this device?
The operating temperature range is from -55°C to 175°C. - Is the NVMFS6H818NT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications. - What type of package does the NVMFS6H818NT1G come in?
The device comes in a DFN5x6 and SO-FL EP package. - What is the maximum power dissipation of this MOSFET?
The maximum power dissipation (Pd) is 68 W. - What is the gate-source voltage rating of the NVMFS6H818NT1G?
The gate-source voltage (Vgs) rating is ±20 V. - What is the gate charge of this device?
The gate charge (Qg) is 46 nC at 10 V. - What are some common applications for the NVMFS6H818NT1G?
Common applications include power management systems, electric vehicle systems, DC-DC converters, and motor control systems in automotive environments.
